View M58WT032KB_4170413.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

M58WT032KT M58WT064KT M58WT032KB M58WT064KB
32- and 64-Mbit (x16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories
Features
Supply voltage - VDD = 1.7 V to 2 V for program, erase and read - VDDQ = 2.7 V to 3.3 V for I/O buffers - VPP = 9 V for fast program Synchronous/asynchronous read - Synchronous burst read mode: 52 MHz - Asynchronous/synchronous page read mode - Random access times: 70 ns Synchronous burst read suspend Programming time - 10 s by word typical for fast factory program - Double/quadruple word program option - Enhanced factory program options Memory blocks - Multiple bank memory array: 4 Mbit banks - Parameter blocks (top or bottom location) Dual operations - Program erase in one bank while read in others - No delay between read and write operations Block locking - All blocks locked at power-up - Any combination of blocks can be locked - WP for block lock-down
FBGA
TFBGA88 (ZAQ) 8 x 10 mm

Security - 128-bit user programmable OTP cells - 64-bit unique device number Common Flash interface (CFI) 100 000 program/erase cycles per block Electronic signature - Manufacturer code: 20h - Device codes: M58WT032KT (top): 8866h M58WT032KB (bottom): 8867h - M58WT064KT (top): 8810h M58WT064KB (bottom): 8811h ECOPACK(R) package available

March 2008
Rev 2
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www.numonyx.com 1
Contents
M58WTxxxKT, M58WTxxxKB
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 Address inputs (A0-Amax) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Data inputs/outputs (DQ0-DQ15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Reset (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Latch Enable (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Clock (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Wait (WAIT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 VDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 VDDQ supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 VPP program supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1 3.2 3.3 3.4 3.5 3.6 Bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Address Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4 5
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Command interface - standard commands . . . . . . . . . . . . . . . . . . . . . 21
5.1 5.2 5.3 Read Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Read Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Read Electronic Signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 5.14
Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Clear Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Program/Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Program/Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Protection Register Program command . . . . . . . . . . . . . . . . . . . . . . . . . . 25 The Set Configuration Register command . . . . . . . . . . . . . . . . . . . . . . . . 25 Block Lock command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Block Unlock command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Block Lock-Down command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6
Command interface - factory program commands . . . . . . . . . . . . . . . 29
6.1 6.2 6.3 Double Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Quadruple Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Enhanced Factory Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.3.1 6.3.2 6.3.3 6.3.4 Setup phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Program phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Verify phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Exit phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.4
Quadruple Enhanced Factory Program command . . . . . . . . . . . . . . . . . . 33
6.4.1 6.4.2 6.4.3 6.4.4 Setup phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Load phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Program and verify phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Exit phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
7
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 Program/Erase Controller status bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . 36 Erase suspend status bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Erase status bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Program status bit (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 VPP status bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Program suspend status bit (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Block protection status bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Bank write/multiple word program status bit (SR0) . . . . . . . . . . . . . . . . . 39
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Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 Read select bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 X latency bits (CR13-CR11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Wait polarity bit (CR10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Data output configuration bit (CR9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Wait configuration bit (CR8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Burst type bit (CR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Valid clock edge bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Wrap burst bit (CR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Burst length bits (CR2-CR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
9
Read modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
9.1 9.2 9.3 9.4 Asynchronous read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Synchronous burst read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Synchronous burst read suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Single synchronous read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
10 11
Dual operations and multiple bank architecture . . . . . . . . . . . . . . . . . 51 Block locking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
11.1 11.2 11.3 11.4 11.5 Reading a block's lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Locked state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Unlocked state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Lock-down state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Locking operations during erase suspend . . . . . . . . . . . . . . . . . . . . . . . . 54
12 13 14 15 16
Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 56 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
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Appendix A Block address tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Appendix B Common Flash interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 Appendix C Flowcharts and pseudo codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
16.1 16.2 Enhanced factory program pseudo code . . . . . . . . . . . . . . . . . . . . . . . . 108 Quadruple enhanced factory program pseudo code . . . . . . . . . . . . . . . 110
Appendix D Command interface state tables. . . . . . . . . . . . . . . . . . . . . . . . . . . 111 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
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List of tables
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List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. Table 37. Table 38. Table 39. Table 40. Table 41. Table 42. Table 43. Table 44. Table 45. Table 46. Table 47. Table 48. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 M58WT032KT/B bank architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 M58WT064KT/B bank architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Command codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Standard commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Electronic signature codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Factory program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Status Register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Latency settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Dual operations allowed in other banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Dual operations allowed in same bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Dual operation limitations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Program/erase times and endurance cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 DC characteristics - currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 DC characteristics - voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Asynchronous read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Synchronous read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Write AC characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Write AC characteristics, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Reset and power-up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 TFBGA88 8 x 10 mm, 8 x 10 ball array, 0.8 mm pitch, package mechanical data. . . . . . . 74 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 Top boot block addresses, M58WT032KT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Bottom boot block addresses, M58WT032KB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 Top boot block addresses, M58WT064KT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 Bottom boot block addresses, M58WT064KB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 CFI query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 CFI query system interface information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 Protection Register information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 Burst read information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 Bank and erase block region information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 Bank and erase block region 1 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 Bank and Erase block region 2 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Command interface states - modify table, next state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 Command interface states - modify table, next output . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 Command interface states - Lock table, next state. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Command interface states - lock table, next output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
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List of figures
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 TFBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 M58WT032KT/B memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 M58WT064KT/B memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Protection Register memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 X latency and data output configuration example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Wait configuration example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 Asynchronous random access read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Asynchronous page read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Synchronous burst read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Single synchronous read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Synchronous burst read suspend AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Clock input AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Write AC waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Write AC waveforms, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Reset and power-up AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 TFBGA88 8 x 10 mm, 8 x 10 ball array, 0.8 mm, package outline. . . . . . . . . . . . . . . . . . . 73 Program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 Double word program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Quadruple word program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 Program suspend and resume flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . 102 Block erase flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Erase suspend and resume flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . 104 Locking operations flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Protection Register program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . 106 Enhanced factory program flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 Quadruple enhanced factory program flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
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Description
M58WTxxxKT, M58WTxxxKB
1
Description
The M58WT032KT/B and M58WT064KT/B are 32 Mbit (2 Mbit x16) and 64 Mbit (4 Mbit x16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word basis using a 1.7 V to 2 V VDD supply for the circuitry and a 2.7 V to 3.3 V VDDQ supply for the input/output pins. An optional 9 V VPP power supply is provided to speed up customer programming. M58WTxxxKT/B is the collective name for all these devices. They feature an asymmetrical block architecture.
The M58WT032KT/B has an array of 71 blocks, and is divided into 4 Mbit banks. There are 7 banks each containing 8 main blocks of 32 Kwords, and one parameter bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords. The M58WT064KT/B has an array of 135 blocks, and is divided into 4 Mbit banks. There are 15 banks each containing 8 main blocks of 32 Kwords, and one parameter bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords.
The multiple bank architecture allows dual operations. While programming or erasing in one bank, read operations are possible in other banks. Only one bank at a time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architectures are summarized in Table 2 and Table 3 and the memory maps are shown in Figure 3 and Figure 4. The parameter blocks are located at the top of the memory address space for the M58WT032KT and M58WT064KT, and at the bottom for the M58WT032KB and M58WT064KB. Each block can be erased separately. Erase can be suspended to perform program in any other block, and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100 000 cycles using the supply voltage VDD. Two enhanced factory programming commands are available to speed up programming. Program and erase commands are written to the command interface of the memory. An internal Program/Erase Controller manages the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 52 MHz. The synchronous burst read operation can be suspended and resumed. The device features an automatic standby mode. When the bus is inactive during asynchronous read operations, the device automatically switches to the automatic standby mode. In this condition the power consumption is reduced to the standby value IDD4 and the outputs are still driven.
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M58WTxxxKT, M58WTxxxKB
Description
The M58WTxxxKT/B feature an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is additional hardware protection against program and erase. When VPP VPPLK all blocks are protected against program or erase. All blocks are locked at power-up. The device includes a Protection Register to increase the protection of a system's design. The Protection Register is divided into two segments: a 64-bit segment containing a unique device number written by Numonyx, and a 128-bit segment one-time-programmable (OTP) by the user. The user programmable segment can be permanently protected. Figure 5 shows the Protection Register memory map. The memory is offered TFBGA88, 8 x 10 mm, 8 x 10 active ball array, 0.8 mm pitch package and is supplied with all the bits erased (set to '1').
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Description Figure 1. Logic diagram
VDD VDDQ VPP 16 A0-Amax(1) W E G RP WP L K M58WT032KT M58WT032KB M58WT064KT M58WT064KB
M58WTxxxKT, M58WTxxxKB
DQ0-DQ15
WAIT
VSS
AI13420c
1. Amax is equal to A20 in the M58WT032KT/B and to A21 in the M58WT064KT/B.
Table 1.
Signal names
Function Address inputs Data input/outputs, command inputs Chip Enable Output Enable Write Enable Reset Write Protect Clock Latch Enable Wait Supply voltage Supply voltage for input/output buffers Optional supply voltage for fast program and erase Ground Not connected internally Inputs I/O Input Input Input Input Input Input Input Output Input Input Input Direction
Signal name A0-Amax(1) DQ0-DQ15 E G W RP WP K L WAIT VDD VDDQ VPP VSS NC
1. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B.
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M58WTxxxKT, M58WTxxxKB Figure 2. TFBGA connections (top view through package)(1)
1 2 3 4 5 6 7
Description
8
A
DU
DU
DU
DU
B
A4
A18
A19
VSS
VDD
NC
A21/ NC(1)
A11
C
A5
NC
NC
VSS
NC
K
NC
A12
D
A3
A17
NC
VPP
NC
NC
A9
A13
E
A2
A7
NC
WP
L
A20
A10
A15
F
A1
A6
NC
RP
W
A8
A14
A16
G
A0
DQ8
DQ2
DQ10
DQ5
DQ13
WAIT
NC
H
NC
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
NC
J
NC
G
DQ9
DQ11
DQ4
DQ6
DQ15
VDDQ
K
E
NC
NC
NC
NC
NC
VDDQ
NC
L
VSS
VSS
VDDQ
VDD
VSS
VSS
VSS
VSS
M
DU
DU
DU
DU
AI13811b
1. Ball B7 is A21 in the M58WT064KT/B, and is not connected internally (NC) in the M58WT032KT/B.
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Description Table 2. M58WT032KT/B bank architecture
Bank size 4 Mbit 4 Mbit 4 Mbit 4 Mbit ----
M58WTxxxKT, M58WTxxxKB
Number Parameter bank Bank 1 Bank 2 Bank 3 ----
Parameter blocks 8 blocks of 4 Kword ----
Main blocks 7 blocks of 32 Kword 8 blocks of 32 Kword 8 blocks of 32 Kword 8 blocks of 32 Kword ---8 blocks of 32 Kword 8 blocks of 32 Kword Main blocks 7 blocks of 32 Kword 8 blocks of 32 Kword 8 blocks of 32 Kword 8 blocks of 32 Kword ---8 blocks of 32 Kword 8 blocks of 32 Kword
Bank 6 Bank 7
4 Mbit 4 Mbit
-
Table 3.
M58WT064KT/B bank architecture
Bank size 4 Mbit 4 Mbit 4 Mbit 4 Mbit ---Parameter blocks 8 blocks of 4 Kword ----
Number Parameter Bank Bank 1 Bank 2 Bank 3 ---Bank 14 Bank 15
4 Mbit 4 Mbit
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M58WTxxxKT, M58WTxxxKB Figure 3. M58WT032KT/B memory map
M58WT032KT - Top Boot Block Address lines A20-A0 000000h 007FFFh Bank 7 038000h 03FFFFh 32 KWord 32 KWord 8 Main Blocks Parameter Bank
Description
M58WT032KB - Bottom Boot Block Address lines A20-A0 000000h 000FFFh 007000h 007FFFh 008000h 00FFFFh 038000h 03FFFFh 040000h 047FFFh Bank 1 078000h 07FFFFh 080000h 087FFFh Bank 2 0B8000h 0BFFFFh 0C0000h 0C7FFFh Bank 3 0F8000h 0FFFFFh 32 KWord 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks 4 KWord 8 Parameter Blocks 4KWord 32 KWord 7 Main Blocks 32 KWord 32 KWord 8 Main Blocks
100000h 107FFFh Bank 3 138000h 13FFFFh 140000h 147FFFh Bank 2 178000h 17FFFFh 180000h 187FFFh Bank 1 1B8000h 1BFFFFh 1C0000h 1C7FFFh 1F0000h 1F7FFFh 1F8000h 1F8FFFh 1FF000h 1FFFFFh
32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 7 Main Blocks 32 KWord 4 KWord 8 Parameter Blocks Bank 7 4 KWord
Parameter Bank
1C0000h 1C7FFFh 1F8000h 1FFFFFh
32 KWord 8 Main Blocks 32 KWord
AI13421b
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Description Figure 4. M58WT064KT/B memory map
M58WT064KT - Top Boot Block Address lines A21-A0 000000h 007FFFh Bank 15 038000h 03FFFFh 32 KWord 32 KWord 8 Main Blocks Parameter Bank
M58WTxxxKT, M58WTxxxKB
M58WT064KB - Bottom Boot Block Address lines A21-A0 000000h 000FFFh 007000h 007FFFh 008000h 00FFFFh 038000h 03FFFFh 040000h 047FFFh Bank 1 078000h 07FFFFh 080000h 087FFFh Bank 2 0B8000h 0BFFFFh 0C0000h 0C7FFFh Bank 3 0F8000h 0FFFFFh 32 KWord 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks 4 KWord 8 Parameter Blocks 4KWord 32 KWord 7 Main Blocks 32 KWord 32 KWord 8 Main Blocks
300000h 307FFFh Bank 3 338000h 33FFFFh 340000h 347FFFh Bank 2 378000h 37FFFFh 380000h 387FFFh Bank 1 3B8000h 3BFFFFh 3C0000h 3C7FFFh 3F0000h 3F7FFFh 3F8000h 3F8FFFh 3FF000h 3FFFFFh
32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 7 Main Blocks 32 KWord 4 KWord 8 Parameter Blocks Bank 15 4 KWord
Parameter Bank
3C0000h 3C7FFFh 3F8000h 3FFFFFh
32 KWord 8 Main Blocks 32 KWord
AI13784b
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M58WTxxxKT, M58WTxxxKB
Signal descriptions
2
Signal descriptions
See Figure 1: Logic diagram and Table 1: Signal names for a brief overview of the signals connected to this device.
2.1
Address inputs (A0-Amax)
Amax is the highest order address input. It is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B. The address inputs select the cells in the memory array to access during bus read operations. During bus write operations they control the commands sent to the command interface of the Program/Erase Controller.
2.2
Data inputs/outputs (DQ0-DQ15)
The data I/O output the data stored at the selected address during a bus read operation or input a command or the data to be programmed during a bus write operation.
2.3
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is at VILand Reset is at VIH the device is in active mode. When Chip Enable is at VIH the memory is deselected, the outputs are high impedance and the power consumption is reduced to the standby level.
2.4
Output Enable (G)
The Output Enable input controls data outputs during the bus read operation of the memory.
2.5
Write Enable (W)
The Write Enable input controls the bus write operation of the memory's command interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable, whichever occurs first.
2.6
Write Protect (WP)
Write Protect is an input that provides additional hardware protection for each block. When Write Protect is at VIL, the lock-down is enabled and the protection status of the lockeddown blocks cannot be changed. When Write Protect is at VIH, the lock-down is disabled and the locked-down blocks can be locked or unlocked. (refer to Table 16: Lock status).
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Signal descriptions
M58WTxxxKT, M58WTxxxKB
2.7
Reset (RP)
The Reset input provides a hardware reset of the memory. When Reset is at VIL, the memory is in reset mode: the outputs are high impedance and the current consumption is reduced to the reset supply current IDD2. Refer to Table 21: DC characteristics - currents for the value of IDD2. After Reset all blocks are in the locked state and the Configuration Register is reset. When Reset is at VIH, the device is in normal operation. Upon exiting reset mode the device enters asynchronous read mode, but a negative transition of Chip Enable or Latch Enable is required to ensure valid data outputs.
2.8
Latch Enable (L)
Latch Enable latches the address bits on its rising edge. The address latch is transparent when Latch Enable is at VIL and it is inhibited when Latch Enable is at VIH. Latch Enable can be kept Low (also at board level) when the Latch Enable function is not required or supported.
2.9
Clock (K)
The clock input synchronizes the memory to the microcontroller during synchronous read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at VIL. Clock is `don't care' during asynchronous read and in write operations.
2.10
Wait (WAIT)
Wait is an output signal used during synchronous read to indicate whether the data on the output bus are valid. This output is high impedance when Chip Enable is at VIH or Reset is at VIL. It can be configured to be active during the wait cycle or one clock cycle in advance. The WAIT signal is not gated by Output Enable.
2.11
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (read, program and erase).
2.12
VDDQ supply voltage
VDDQ provides the power supply to the I/O pins and enables all outputs to be powered independently of VDD.
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M58WTxxxKT, M58WTxxxKB
Signal descriptions
2.13
VPP program supply voltage
VPP is both a control input and a power supply pin. The two functions are selected by the voltage range applied to the pin. If VPP is kept in a low voltage range (0 V to VDDQ) VPP is seen as a control input. In this case a voltage lower than VPPLK provides absolute protection against program or erase, while VPP in the VPP1 range enables these functions (see Tables 21 and 22, DC characteristics for the relevant values). VPP is only sampled at the beginning of a program or erase; a change in its value after the operation has started does not have any effect and program or erase operations continue. If VPP is in the range of VPPH it acts as a power supply pin. In this condition VPP must be stable until the program/erase algorithm is completed.
2.14
VSS ground
VSS is the common ground reference for all votage measurements in the Flash (core and I/O buffers). It must be connected to the system ground.
Note:
Each device in a system should have VDD, VDDQ and VPP decoupled with a 0.1 F ceramic capacitor close to the pin (high-frequency, inherently-low inductance capacitors should be as close as possible to the package). See Figure 9: AC measurement load circuit. The PCB track widths should be sufficient to carry the required VPP program and erase currents.
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Bus operations
M58WTxxxKT, M58WTxxxKB
3
Bus operations
There are six standard bus operations that control the device. These are bus read, bus write, address latch, output disable, standby and reset. See Table 4: Bus operations for a summary. Typically glitches of less than 5 ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus write operations.
3.1
Bus read
Bus read operations output the contents of the memory array, the electronic signature, the Status Register and the common Flash interface. Both Chip Enable and Output Enable must be at VIL in order to perform a read operation. The Chip Enable input should be used to enable the device. Output Enable should be used to gate data onto the output. The data read depends on the previous command written to the memory (see Section 4: Command interface). See Figures 10, 11, 12 and 13, read AC waveforms, and Tables 23 and 24, read AC characteristics, for details of when the output becomes valid.
3.2
Bus write
Bus write operations write commands to the memory or latch input data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at VIL with Output Enable at VIH. Commands, input data and addresses are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. The addresses can also be latched prior to the write operation by toggling Latch Enable. In this case the Latch Enable should be tied to VIH during the bus write operation. See Figures 16 and 17, write AC waveforms, and Tables 25 and 26, write AC characteristics for details of the timing requirements.
3.3
Address Latch
Address latch operations input valid addresses. Both Chip enable and Latch Enable must be at VIL during address latch operations. The addresses are latched on the rising edge of Latch Enable.
3.4
Output Disable
The outputs are high impedance when the Output Enable is at VIH.
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M58WTxxxKT, M58WTxxxKB
Bus operations
3.5
Standby
Standby disables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in standby when Chip Enable and Reset are at VIH. The power consumption is reduced to the standby level and the outputs are set to high impedance, independently from the Output Enable or Write Enable inputs. If Chip Enable switches to VIH during a program or erase operation, the device enters standby mode when finished.
3.6
Reset
During reset mode the memory is deselected and the outputs are high impedance. The memory is in reset mode when Reset is at VIL. The power consumption is reduced to the standby level, independently from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to VSS during a program or erase, this operation is aborted and the memory content is no longer valid. Table 4.
Operation Bus read Bus write Address latch Output disable Standby Reset
1. X = `don't care' 2. WAIT signal polarity is configured using the Set Configuration Register command. 3. L can be tied to VIH if the valid address has been previously latched. 4. Depends on G.
Bus operations(1)
E VIL VIL VIL VIL VIH X G VIL VIH X VIH X X W VIH VIL VIH VIH X X L VIL(3) VIL
(3)
RP VIH VIH VIH VIH VIH VIL
WAIT(2)
DQ15-DQ0 Data output Data input Data output or Hi-Z (4) Hi-Z
VIL X X X
Hi-Z Hi-Z
Hi-Z Hi-Z
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Command interface
M58WTxxxKT, M58WTxxxKB
4
Command interface
All bus write operations to the memory are interpreted by the command interface. Commands consist of one or more sequential bus write operations. An internal Program/Erase Controller manages all timings and verifies the correct execution of the program and erase commands. The Program/Erase Controller provides a Status Register whose output may be read at any time to monitor the progress or the result of the operation. The command interface is reset to read mode when power is first applied, when exiting from Reset, or whenever VDD is lower than VLKO. Command sequences must be followed exactly. Any invalid combination of commands is ignored. Refer to Table 5: Command codes, and Appendix D, Tables 44, 45, 46 and 47, command interface states - modify and lock tables, for a summary of the command interface. The command interface is split into two types of commands: standard commands and factory program commands. The following sections explain in detail how to perform each command. Table 5. Command codes
Command Block Lock Confirm Set Configuration Register Confirm Alternative Program Setup Block Erase Setup Block Lock-Down Confirm Enhanced Factory Program Setup Double Word Program Setup Program Setup Clear Status Register Quadruple Word Program Setup Block Lock Setup, Block Unlock Setup, Block Lock Down Setup and Set Configuration Register Setup Read Status Register Quadruple Enhanced Factory Program Setup Read Electronic Signature Read CFI Query Program/Erase Suspend Protection Register Program Program/Erase Resume, Block Erase Confirm, Block Unlock Confirm or Enhanced Factory Program Confirm Read Array
Hex Code 01h 03h 10h 20h 2Fh 30h 35h 40h 50h 56h 60h 70h 75h 90h 98h B0h C0h D0h FFh
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M58WTxxxKT, M58WTxxxKB
Command interface - standard commands
5
Command interface - standard commands
The following commands are the basic commands used to read, write to and configure the device. Refer to Table 6: Standard commands, in conjunction with the following descriptions in this section.
5.1
Read Array command
The Read Array command returns the addressed bank to read array mode. One bus write cycle is required to issue the Read Array command and return the addressed bank to read array mode. Subsequent read operations read the addressed location and output the data. A Read Array command can be issued in one bank while programming or erasing in another bank. However, if a Read Array command is issued to a bank currently executing a program or erase operation the command is executed but the output data is not guaranteed.
5.2
Read Status Register command
The Status Register indicates when a program or erase operation is complete and the success or failure of operation itself. Issue a Read Status Register command to read the Status Register content. The Read Status Register command can be issued at any time, even during program or erase operations. The following read operations output the content of the Status Register of the addressed bank. The Status Register is latched on the falling edge of E or G signals, and can be read until E or G returns to VIH. Either E or G must be toggled to update the latched data. See Table 9 for the description of the Status Register bits. This mode supports asynchronous or single synchronous reads only.
5.3
Read Electronic Signature command
The Read Electronic Signature command reads the manufacturer and device codes, the block locking status, the Protection Register, and the Configuration Register. The Read Electronic Signature command consists of one write cycle to an address within one of the banks. A subsequent read operation in the same bank outputs the manufacturer code, the device code, the protection status of the blocks in the targeted bank, the Protection Register, or the Configuration Register (see Table 7). Dual operations between the parameter bank and the electronic signature locations are not allowed (see Table 15: Dual operation limitations). If a Read Electronic Signature command is issued in a bank that is executing a program or erase operation, the bank goes into read electronic signature mode, subsequent bus read cycles output the electronic signature data, and the Program/Erase Controller continues to program or erase in the background. This mode supports asynchronous or single synchronous reads only; it does not support page mode or synchronous burst reads.
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Command interface - standard commands
M58WTxxxKT, M58WTxxxKB
5.4
Read CFI Query command
The Read CFI Query command reads data from the common Flash interface (CFI). The Read CFI Query command consists of one bus write cycle to an address within one of the banks. Once the command is issued subsequent bus read operations in the same bank read from the common Flash interface. If a Read CFI Query command is issued in a bank that is executing a program or erase operation, the bankgoes into Read CFI Query mode, subsequent bus read cycles output the CFI data, and the Program/Erase Controller continues to program or erase in the background. This mode supports asynchronous or single synchronous reads only; it does not support page mode or synchronous burst reads. The status of the other banks is not affected by the command (see Table 13). After issuing a Read CFI Query command, a Read Array command should be issued to the addressed bank to return the bank to read array mode. Dual operations between the parameter bank and the CFI memory space are not allowed (see Table 15: Dual operation limitations for details). See Appendix B: Common Flash interface, Tables 34, 35, 36, 37, 38, 39, 40, 41, 42 and 43 for details on the information contained in the common Flash interface memory area.
5.5
Clear Status Register command
The Clear Status Register command resets (set to `0') error bits SR1, SR3, SR4 and SR5 in the Status Register. One bus write cycle is required to issue the Clear Status Register command. The Clear Status Register command does not change the read mode of the bank. The error bits in the Status Register do not automatically return to `0' when a new command is issued. The error bits in the Status Register should be cleared before attempting a new program or erase command.
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M58WTxxxKT, M58WTxxxKB
Command interface - standard commands
5.6
Block Erase command
The Block Erase command erases a block. It sets all the bits within the selected block to '1'. All previous data in the block is lost. If the block is protected then the erase operation aborts, the data in the block does not change, and the Status Register outputs the error. The Block Erase command can be issued at any moment, regardless of whether the block has been programmed or not. Two bus write cycles are required to issue the command:

The first bus cycle sets up the erase command The second latches the block address in the Program/Erase Controller and starts it
If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits SR4 and SR5 are set and the command aborts. Erase aborts if Reset turns to VIL. As data integrity cannot be guaranteed when the erase operation is aborted, the block must be erased again. Once the command is issued, the device outputs the Status Register data when any address within the bank is read. At the end of the operation the bank remains in Read Status Register mode until a Read Array, Read CFI Query, or Read Electronic Signature command is issued. During erase operations the bank containing the block being erased only accepts the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend commands; all other commands are ignored. Refer to Section 10 for detailed information about simultaneous operations allowed in banks not being erased. Typical erase times are given in Table 17: Program/erase times and endurance cycles. See Appendix C, Figure 24: Block erase flowchart and pseudo code for a suggested flowchart for using the Block Erase command.
5.7
Program command
The memory array can be programmed word-by-word. Only one word in one bank can be programmed at any one time. If the block is protected, the program operation aborts, the data in the block does not change, and the Status Register outputs the error. Two bus write cycles are required to issue the Program command:

The first bus cycle sets up the Program command The second latches the address and the data to be written and starts the Program/Erase Controller
After programming has started, read operations in the bank being programmed output the Status Register content. During Program operations the bank being programmed only accepts the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend commands. Refer to Section 10 for detailed information about simultaneous operations allowed in banks not being programmed. Typical program times are given in Table 17: Program/erase times and endurance cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the memory location must be reprogrammed. See Appendix C, Figure 20: Program flowchart and pseudo code for the flowchart for using the Program command.
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Command interface - standard commands
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5.8
Program/Erase Suspend command
The Program/Erase Suspend command pauses a program or block erase operation. One bus write cycle is required to issue the Program/Erase Suspend command. Once the Program/Erase Controller has paused bits SR7, SR6 and/ or SR2 of the Status Register are set to `1'. The command can be addressed to any bank. During program/erase suspend the command interface accepts the Program/Erase Resume, Read Array (cannot read the erase-suspended block or the program-suspended word), Read Status Register, Read Electronic Signature, Clear Status Register, and Read CFI Query commands. In addition, if the suspended operation is erase then the Set Configuration Register, Program, Block Lock, Block Lock-Down or Block Unlock commands are also accepted. The block being erased may be protected by issuing the Block Lock, or Block Lock-Down commands. Only the blocks not being erased may be read or programmed correctly. When the Program/Erase Resume command is issued the operation completes. Refer to Section 10 for detailed information about simultaneous operations allowed during Program/Erase Suspend. During a program/erase suspend, the device is placed in standby mode by taking Chip Enable to VIH. Program/erase is aborted if Reset turns to VIL. See Appendix C, Figure 23: Program suspend and resume flowchart and pseudo code, and Figure 25: Erase suspend and resume flowchart and pseudo code for flowcharts for using the Program/Erase Suspend command.
5.9
Program/Erase Resume command
The Program/Erase Resume command restarts the Program/Erase Controller after a Program/Erase Suspend command has paused it. One bus write cycle is required to issue the command. The command can be written to any address. The Program/Erase Resume command does not change the read mode of the banks. If the suspended bank is in read Status Register, read electronic signature or read CFI query mode the bank remains in that mode and outputs the corresponding data. If the bank is in read array mode, subsequent read operations output invalid data. If a Program command is issued during a block erase suspend, the erase cannot be resumed until the programming operation has completed. It is possible to accumulate suspend operations. For example, it is possible to suspend an erase operation, start a programming operation, suspend the programming operation, and then read the array. See Appendix C, Figure 23: Program suspend and resume flowchart and pseudo code and Figure 25: Erase suspend and resume flowchart and pseudo code for flowcharts for using the Program/Erase Resume command.
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M58WTxxxKT, M58WTxxxKB
Command interface - standard commands
5.10
Protection Register Program command
The Protection Register Program command programs the 128-bit user OTP segment of the Protection Register and the Protection Register lock. The segment is programmed 16 bits at a time. When shipped, all bits in the segment are set to `1'. The user can only program the bits to `0'. Two write cycles are required to issue the Protection Register Program command:

The first bus cycle sets up the Protection Register Program command. The second latches the address and the data to be written to the Protection Register and starts the Program/Erase Controller.
Read operations output the Status Register content after the programming has started. The segment can be protected by programming bit 1 of the Protection Lock Register (see Figure 5: Protection Register memory map). Attempting to program a previously protected Protection Register results in a Status Register error. The protection of the Protection Register is not reversible. The Protection Register program cannot be suspended. Dual operations between the parameter bank and the Protection Register memory space are not allowed (see Table 15: Dual operation limitations).
5.11
The Set Configuration Register command
The Set Configuration Register command writes a new value to the Configuration Register, which defines the burst length, type, X latency, synchronous/asynchronous read mode, and the valid Clock edge configuration. Two bus write cycles are required to issue the Set Configuration Register command:

The first cycle writes the setup command and the address corresponding to the Configuration Register content. The second cycle writes the Configuration Register data and the confirm command.
Read operations output the memory array content after the Set Configuration Register command is issued. The value for the Configuration Register is always presented on A0-A15. CR0 is on A0, CR1 on A1, etc.; the other address bits are ignored.
5.12
Block Lock command
The Block Lock command locks a block and prevents program or erase operations from changing the data in it. All blocks are locked at power-up or reset. Two bus write cycles are required to issue the Block Lock command:

The first bus cycle sets up the Block Lock command. The second bus write cycle latches the block address.
The lock status can be monitored for each block using the Read Electronic Signature command. Table 16 shows the lock status after issuing a Block Lock command. The block lock bits are volatile; once set they remain set until a hardware reset or powerdown/power-up. They are cleared by a Block Unlock command. Refer to Section 11: Block locking for a detailed explanation. See Appendix C, Figure 26: Locking operations flowchart and pseudo code for a flowchart for using the Lock command.
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Command interface - standard commands
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5.13
Block Unlock command
The Block Unlock command unlocks a block, allowing the block to be programmed or erased. Two bus write cycles are required to issue the Block Unlock command:

The first bus cycle sets up the Block Unlock command. The second bus write cycle latches the block address.
The lock status can be monitored for each block using the Read Electronic Signature command. Table 16 shows the protection status after issuing a Block Unlock command. Refer to Section 11: Block locking for a detailed explanation and Appendix C, Figure 26: Locking operations flowchart and pseudo code for a flowchart for using the Unlock command.
5.14
Block Lock-Down command
A locked or unlocked block can be locked down by issuing the Block Lock-Down command. A locked-down block cannot be programmed or erased, or have its protection status changed when WP is low, VIL. When WP is high, VIH, the lock-down function is disabled and the locked blocks can be individually unlocked by the Block Unlock command. Two bus write cycles are required to issue the Block Lock-Down command:

The first bus cycle sets up the Block Lock command. The second bus write cycle latches the block address.
The lock status can be monitored for each block using the Read Electronic Signature command. Locked-down blocks revert to the locked (and not locked-down) state when the device is reset on power-down. Table 16 shows the lock status after issuing a Block LockDown command. Refer to Section 11: Block locking for a detailed explanation and Appendix C, Figure 26: Locking operations flowchart and pseudo code for a flowchart for using the Lock-Down command.
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M58WTxxxKT, M58WTxxxKB Table 6. Standard commands
Command interface - standard commands
Bus operations(1) Commands Cycles 1st cycle Op. Read Array Read Status Register Read Electronic Signature Read CFI Query Clear Status Register Block Erase Program Program/Erase Suspend Program/Erase Resume Protection Register Program Set Configuration Register Block Lock Block Unlock Block Lock-Down 1+ 1+ 1+ 1+ 1 2 2 1 1 2 2 2 2 2 Write Write Write Write Write Write Write Write Write Write Write Write Write Write Add BKA BKA BKA BKA X BKA or BA(3) BKA or WA(3) X X PRA CRD BKA or BA(3) BKA or BA(3) BKA or BA(3) Data FFh 70h 90h 98h 50h 20h 40h or 10h B0h D0h C0h 60h 60h 60h 60h Write Write Write Write Write PRA CRD BA BA BA PRD 03h 01h D0h 2Fh Write Write BA WA D0h PD Op. Read Read Read Read 2nd cycle Add WA BKA(2) BKA
(2)
Data RD SRD ESD QD
BKA(2)
1. X = `don't care', WA = Word Address in targeted bank, RD = Read Data, SRD = Status Register Data, ESD = Electronic Signature Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD = Program Data, PRA = Protection Register Address, PRD = Protection Register Data, CRD = Configuration Register Data. 2. Must be same bank as in the first cycle. The signature addresses are listed in Table 7. 3. Any address within the bank can be used.
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Command interface - standard commands Table 7. Electronic signature codes
Code Manufacturer code Top Device code Bottom Locked Unlocked Block protection Locked and locked-down Unlocked and locked-down Reserved Configuration Register Protection Register lock Numonyx factory default
M58WTxxxKT, M58WTxxxKB
Address (h) Bank address + 00 Bank address + 01 Bank address + 01
Data (h) 0020 8866 (M58WT032KT) 8810 (M58WT064KT) 8867 (M58WT032KB) 8811 (M58WT064KB) 0001 0000
Block address + 02 0003 0002 Bank address + 03 Bank address + 05 Bank address + 80 OTP area permanently locked Bank address + 81 Bank address + 84 0000 Unique device number OTP Area Reserved CR(1) 0002
Protection Register Bank address + 85 Bank address + 8C
1. CR = Configuration Register.
Figure 5.
Protection Register memory map
PROTECTION REGISTER 8Ch User Programmable OTP 85h 84h Unique device number 81h 80h Protection Register Lock 1 0
AI08149
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M58WTxxxKT, M58WTxxxKB
Command interface - factory program commands
6
Command interface - factory program commands
The factory program commands are specifically designed to speed up programming. They require VPP to be at VPPH. Refer to Table 8: Factory program commands in conjunction with the descriptions in this section. The use of factory program commands requires certain operating conditions:

VPP must be set to VPPH. VDD must be within operating range. Ambient temperature, TA must be 25C 5C. The targeted block must be unlocked.
6.1
Double Word Program command
The Double Word Program command improves the programming throughput by writing a page of two adjacent words in parallel. The two words must only differ for the address A0. If the block is protected, then the Double Word Program operation aborts, the data in the block does not change, and the Status Register outputs the error. VPP must be set to VPPH during Double Word Program, otherwise the command is ignored and the Status Register does not output any error. Three bus write cycles are necessary to issue the Double Word Program command:

The first bus cycle sets up the Double Word Program command. The second bus cycle latches the address and the data of the first word to be written. The third bus cycle latches the address and the data of the second word to be written and starts the Program/Erase Controller.
Read operations in the bank being programmed output the Status Register content after the programming has started. During double word program operations the bank being programmed only accepts the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query commands; all other commands are ignored. Dual operations are not supported during double word program operations and the command cannot be suspended. Typical program times are given in Table 17: Program/erase times and endurance cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the memory locations must be reprogrammed. See Appendix C, Figure 21: Double word program flowchart and pseudo code for the flowchart for using the Double Word Program command.
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Command interface - factory program commands
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6.2
Quadruple Word Program command
The Quadruple Word Program command improves the programming throughput by writing a page of four adjacent words in parallel. The four words must only differ for the addresses A0 and A1. VPP must be set to VPPH during Quadruple Word Program, otherwise the command is ignored and the Status Register does not output any error. If the block is protected, then the Quadruple Word Program operation aborts, the data in the block does not change, and the Status Register outputs the error. Five bus write cycles are necessary to issue the Quadruple Word Program command:

The first bus cycle sets up the Double Word Program command. The second bus cycle latches the address and the data of the first word to be written. The third bus cycle latches the address and the data of the second word to be written. The fourth bus cycle latches the address and the data of the third word to be written. The fifth bus cycle latches the address and the data of the fourth word to be written and starts the Program/Erase Controller.
Read operations to the bank being programmed output the Status Register content after the programming has started. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the memory locations must be reprogrammed. During Quadruple Word Program operations the bank being programmed only accepts the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query commands; all other commands are ignored. Dual operations are not supported during quadruple word program operations and the command cannot be suspended. Typical program times are given in Table 17: Program/erase times and endurance cycles. See Appendix C, Figure 22: Quadruple word program flowchart and pseudo code for the flowchart for using the Quadruple Word Program command.
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Command interface - factory program commands
6.3
Enhanced Factory Program command
The Enhanced Factory Program command programs large streams of data within any one block. It greatly reduces the total programming time when a large number of words are written to a block at any one time. Dual operations are not supported during the Enhanced Factory Program operation and the command cannot be suspended. For optimum performance the Enhanced Factory Program commands should be limited to a maximum of 10 program/erase cycles per block. If this limit is exceeded the internal algorithm continues to work properly but some degradation in performance is possible. Typical program times are given in Table 17 If the block is protected then the Enhanced Factory Program operation aborts, the data in the block does not change, and the Status Register outputs the error. The Enhanced Factory Program command has four phases: the setup phase, the program phase to program the data to the memory, the verify phase to check that the data has been correctly programmed and reprogram if necessary and the exit phase. Refer to Table 8: Factory program commands, and Figure 28: Enhanced factory program flowchart.
6.3.1
Setup phase
The Enhanced Factory Program command requires two bus write operations to initiate the command:

The first bus cycle sets up the Enhanced Factory Program command The second bus cycle confirms the command.
The Status Register P/EC bit SR7 should be read to check that the P/EC is ready. After the confirm command is issued, read operations output the Status Register data. The read Status Register command must not be issued or it is interpreted as data to program. If the second bus cycle is not EFP confirm (D0h), Status Register bits SR4 and SR5 are set and the command aborts. VPP value must be in the VPPH range during the confirm command, otherwise SR4 and SR3 are set and command are aborted.
6.3.2
Program phase
The program phase requires n+1 cycles, where n is the number of words (refer to Table 8: Factory program commands, and Figure 28: Enhanced factory program flowchart). Three successive steps are required to issue and execute the program phase of the command: 1. Use one bus write operation to latch the start address and the first word to be programmed, where the start address is the location of the first data to be programmed. The Status Register Bank Write Status bit SR0 should be read to check that the P/EC is ready for the next word.
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Command interface - factory program commands 2.
M58WTxxxKT, M58WTxxxKB
Each subsequent word to be programmed is latched with a new bus write operation. The address can either remain the start address, in which case the P/EC increments the address location. Or the address can be incremented, in which case the P/EC jumps to the new address. If any address is given that is not in the same block as the start address with data FFFFh, the program phase terminates and the verify phase begins. The Status Register bit SR0 should be read between each bus write cycle to check that the P/EC is ready for the next word. Finally, after all words have been programmed, write one bus write operation with data FFFFh to any address outside the block containing the start address, to terminate the programming phase. If the data is not FFFFh, the command is ignored.
3.
The memory is now set to enter the verify phase.
6.3.3
Verify phase
The verify phase is similar to the program phase in that all words must be resent to the memory for them to be checked against the programmed data. The Program/Erase Controller checks the stream of data with the data that was programmed in the program phase and reprograms the memory location, if necessary. Three successive steps are required to execute the verify phase of the command: 1. Use one bus write operation to latch the start address and the first word to be verified. The Status Register bit SR0 should be read to check that the Program/Erase Controller is ready for the next word. Each subsequent word to be verified is latched with a new bus write operation. The words must be written in the same order as in the program phase. The address can remain the start address or be incremented. If any address that is not in the same block as the start address is given with data FFFFh, the verify phase terminates. Status Register bit SR0 should be read to check that the P/EC is ready for the next word. Finally, after all words have been verified, write one bus write operation with data FFFFh to any address outside the block containing the start address, to terminate the verify phase.
2.
3.
If the verify phase is successfully completed, the memory remains in read Status Register mode. If the Program/Erase Controller fails to reprogram a given location, the error is signaled in the Status Register.
6.3.4
Exit phase
Status Register P/EC bit SR7 set to `1' indicates that the device has returned to read mode. A full Status Register check should be done to ensure that the block has been successfully programmed. See Section 7: Status Register for more details.
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Command interface - factory program commands
6.4
Quadruple Enhanced Factory Program command
The Quadruple Enhanced Factory Program command programs one or more pages of four adjacent words in parallel. The four words must only differ for the addresses A0 and A1. VPP must be set to VPPH during the Quadruple Enhanced Factory Program, otherwise the command is ignored and the Status Register does not output any error. Dual operations are not supported during Quadruple Enhanced Factory Program operations and the command cannot be suspended. If the block is protected then the Quadruple Enhanced Factory Program operation aborts, the data in the block does not change, and the Status Register outputs the error. The Quadruple Enhanced Factory Program command has four phases: the setup phase, the load phase where the data is loaded into the buffer, the combined program and verify phase where the loaded data is programmed to the memory and then automatically checked and reprogrammed if necessary and the exit phase. Unlike the Enhanced Factory Program it is not necessary to resubmit the data for the verify phase. The load phase and the program and verify phase can be repeated to program any number of pages within the block.
6.4.1
Setup phase
The Quadruple Enhanced Factory Program command requires one bus write operation to initiate the load phase. After the setup command is issued, read operations output the Status Register data. The Read Status Register command must not be issued or it is interpreted as data to program.
6.4.2
Load phase
The load phase requires 4 cycles to load the data (refer to Table 8: Factory program commands and Figure 29: Quadruple enhanced factory program flowchart). Once the first word of each page is written it is impossible to exit the load phase until all four words have been written. Two successive steps are required to issue and execute the load phase of the Quadruple Enhanced Factory Program command. 1. Use one bus write operation to latch the start address and the first word of the first page to be programmed, where the start address is the location of the first data to be programmed. For subsequent pages the first word address can remain the start address (in which case the next page is programmed) or can be any address in the same block. If any address with data FFFFh is given that is not in the same block as the start address, the device enters the exit phase. For the first load phase Status Register bit SR7 should be read after the first word has been issued to check that the command has been accepted (bit SR7 set to `0'). This check is not required for subsequent load phases. Each subsequent word to be programmed is latched with a new bus write operation. The address is only checked for the first word of each page as the order of the words to be programmed is fixed.
2.
The memory is now set to enter the program and verify phase.
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Command interface - factory program commands
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6.4.3
Program and verify phase
In the program and verify phase the four words that were loaded in the load phase are programmed in the memory array and then verified by the Program/Erase Controller. If any errors are found, the Program/Erase Controller reprograms the location. During this phase the Status Register shows that the Program/Erase Controller is busy, the Status Register bit SR7 is set to `0', and that the device is not waiting for new data (Status Register bit SR0 set to `1'). When Status Register bit SR0 is set to `0' the program and verify phase has terminated. Once the verify phase has successfully completed, subsequent pages in the same block can be loaded and programmed. The device returns to the beginning of the load phase by issuing one bus write operation to latch the address and the first of the four new words to be programmed.
6.4.4
Exit phase
Finally, after all the pages have been programmed, write one bus write operation with data FFFFh to any address outside the block containing the start address, to terminate the load and program and verify phases. Status Register bit SR7 set to `1' and bit SR0 set to `0' indicate that the Quadruple Enhanced Factory Program command has terminated. A full Status Register check should be done to ensure that the block has been successfully programmed. See Section 7: Status Register for more details. If the program and verify phase has successfully completed the memory returns to read mode. If the P/EC fails to program and reprogram a given location, the error is signaled in the Status Register.
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M58WTxxxKT, M58WTxxxKB Table 8. Factory program commands
Command interface - factory program commands
Bus write operations(1) Command Phase Cycles 1st Add Double Word Program(2) Quadruple Word Program(4) Enhanced Setup, Factory Program Program (5) Verify, Exit Setup, first Load First Program & Quadruple Verify Enhanced Subsequent Factory Loads Program (4),(5) Subsequent Program & Verify Exit 3 5 BKA or WA1(3) BKA or WA1(3) Data 35h 56h 30h PD1 75h 2nd Add WA1 WA1 Data PD1 PD1 3rd Add WA2 WA2 Data PD2 PD2 PD1 PD3 PD2 WA3 PD3 WA4 PD4 Final -1 Add Data Final Add Data
2+n+ BKA or 1 WA1(3) n+1 WA1(7) 5 BKA or WA1(3)
BA or D0h WA1(7) WA1(6) WA2(8) PD2 WA3(8) WA1(7) PD1 WA2(9)
WAn(8) PAn WAn(8) PAn
NOT FFFFh WA1(7) NOT FFFFh WA1(7) PD4
WA3(9) PD3 WA4(9)
Automatic WA1i
(7)
4
PD1i
WA2i(9) PD2i WA3i(9) PD3i
WA4i(9)
PD4i
Automatic NOT FFFFh WA1(7)
1
1. WA = Word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address. 2. Word addresses 1 and 2 must be consecutive Addresses differing only for A0. 3. Any address within the bank can be used. 4. Word addresses 1,2,3 and 4 must be consecutive addresses differing only for A0 and A1. 5. A bus read must be done between each write cycle where the data is programmed or verified to read the Status Register and check that the memory is ready to accept the next data. n = number of words, i = number of pages to be programmed. 6. Any address within the block can be used. 7. WA1 is the start address. NOT WA1 is any address that is not in the same block as WA1. 8. Address can remain starting address WA1 or be incremented. 9. Address is only checked for the first word of each page as the order to program the words in each page is fixed so subsequent words in each page can be written to any address.
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Status Register
M58WTxxxKT, M58WTxxxKB
7
Status Register
The Status Register provides information on the current or previous program or erase operations. Issue a Read Status Register command to read the contents of the Status Register (refer to Section 5.2: Read Status Register command for more details). To output the contents, the Status Register is latched and updated on the falling edge of the Chip Enable or Output Enable signals and can be read until Chip Enable or Output Enable returns to VIH. The Status Register can only be read using single asynchronous or single synchronous reads. Bus read operations from any address within the bank always read the Status Register during Program and Erase operations, as long as no Read Array command has been issued. The various bits convey information about the status and any errors of the operation. Bits SR7, SR6, SR2 and SR0 provide information on the status of the device and are set and reset by the device. Bits SR5, SR4, SR3 and SR1 provide information on errors. TThey are set by the device but must be reset by issuing a Clear Status Register command or a hardware reset. If an error bit is set to `1' the Status Register should be reset before issuing another command. SR7 to SR1 refer to the status of the device while SR0 refers to the status of the addressed bank. The bits in the Status Register are summarized in Table 9: Status Register bits. Refer to Table 9 in conjunction with the descriptions in the following sections.
7.1
Program/Erase Controller status bit (SR7)
The Program/Erase Controller status bit indicates whether the Program/Erase Controller is active or inactive in any bank. When the Program/Erase Controller status bit is Low (set to `0'), the Program/Erase Controller is active; when the bit is High (set to `1'), the Program/Erase Controller is inactive, and the device is ready to process a new command. The Program/Erase Controller status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller pauses. After the Program/Erase Controller pauses the bit is High. During program and erase operations the Program/Erase Controller status bit can be polled to find the end of the operation. Other bits in the Status Register should not be tested until the Program/Erase Controller completes the operation and the bit is High. After the Program/Erase Controller completes its operation the erase status, program status, VPP status and block lock status bits should be tested for errors.
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M58WTxxxKT, M58WTxxxKB
Status Register
7.2
Erase suspend status bit (SR6)
The erase suspend status bit indicates that an erase operation has been suspended or is going to be suspended in the addressed block. When the erase suspend status bit is High (set to `1'), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The erase suspend status should only be considered valid when the Program/Erase Controller status bit is High (Program/Erase Controller inactive). SR7 is set within the erase suspend latency time of the Program/Erase Suspend command being issued, therefore, the memory may still complete the operation rather than entering the suspend mode. When a Program/Erase Resume command is issued the erase suspend status bit returns Low.
7.3
Erase status bit (SR5)
The erase status bit identifies if the memory has failed to verify that the block has erased correctly. When the erase status bit is High (set to `1'), the Program/Erase Controller has applied the maximum number of pulses to the block and still failed to verify that it has erased correctly. The erase status bit should be read once the Program/Erase Controller status bit is High (Program/Erase Controller inactive). Once set High, the erase status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new program or erase command is issued, otherwise the new command appears to fail.
7.4
Program status bit (SR4)
The program status bit identifies a program failure or an attempt to program a `1' to an already programmed bit when VPP = VPPH. When the program status bit is High (set to `1'), the Program/Erase Controller has applied the maximum number of pulses to the byte and still failed to verify that it has programmed correctly. After an attempt to program a '1' to an already programmed bit, the program status bit SR4 only goes High (set to '1') if VPP = VPPH (if VPP is different from VPPH, SR4 remains Low (set to '0') and the attempt is not shown). The program status bit should be read once the Program/Erase Controller status bit is High (Program/Erase Controller inactive). Once set High, the program status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command appears to fail.
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Status Register
M58WTxxxKT, M58WTxxxKB
7.5
VPP status bit (SR3)
The VPP status bit identifies an invalid voltage on the VPP pin during program and erase operations. The VPP pin is only sampled at the beginning of a program or erase operation. Indeterminate results can occur if VPP becomes invalid during an operation. When the VPP status bit is Low (set to `0'), the voltage on the VPP pin was sampled at a valid voltage. When the VPP status bit is High (set to `1'), the VPP pin has a voltage that is below the VPP lockout voltage, VPPLK, the memory is protected and program and erase operations cannot be performed. Once set High, the VPP status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new program or erase command is issued, otherwise the new command appears to fail.
7.6
Program suspend status bit (SR2)
The program suspend status bit indicates that a program operation has been suspended in the addressed block. When the program suspend status bit is High (set to `1'), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The program suspend status should only be considered valid when the Program/Erase Controller status bit is High (Program/Erase Controller inactive). SR2 is set within the program suspend latency time of the Program/Erase Suspend command being issued, therefore, the memory may still complete the operation rather than entering the suspend mode. When a Program/Erase Resume command is issued, the program suspend status bit returns Low.
7.7
Block protection status bit (SR1)
The block protection status bit can be used to identify if a program or block erase operation has tried to modify the contents of a locked or locked-down block. When the block protection status bit is High (set to `1'), a program or erase operation has been attempted on a locked or locked-down block. Once set High, the block protection status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command appears to fail.
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Status Register
7.8
Bank write/multiple word program status bit (SR0)
The bank write status bit indicates whether the addressed bank is programming or erasing. In enhanced factory program mode the multiple word program bit shows if a word has finished programming or verifying depending on the phase. The bank write status bit should only be considered valid when the Program/Erase Controller status SR7 is Low (set to `0'). When both the Program/Erase Controller status bit and the bank write status bit are Low (set to `0'), the addressed bank is executing a program or erase operation. When the Program/Erase Controller status bit is Low (set to `0') and the bank write status bit is High (set to `1'), a program or erase operation is being executed in a bank other than the one being addressed. In enhanced factory program mode if the multiple word program status bit is Low (set to `0'), the device is ready for the next word. If the multiple word program status bit is High (set to `1') the device is not ready for the next word. Refer to Appendix C: Flowcharts and pseudo codes for using the Status Register.
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Status Register Table 9.
Bit
M58WTxxxKT, M58WTxxxKB Status Register bits
Name Type Logic level(1) '1' Ready Busy Erase suspended Erase in progress or completed Erase error Erase success Program error Program success VPP invalid, abort VPP OK Program suspended Program in progress or completed Program/erase on protected block, abort No operation to protected blocks SR7 = `1' Not allowed '1' SR7 = `0' Bank write status Status SR7 = `1' '0' SR7 = `0' Program or erase operation in a bank other than the addressed bank No program or erase operation in the device Program or erase operation in addressed bank Definition
SR7 P/EC status
Status '0' '1'
SR6 Erase suspend status
Status '0' '1'
SR5 Erase status
Error '0' '1'
SR4 Program status
Error '0' '1'
SR3 VPP status
Error '0' '1' Status '0' '1'
SR2 Program suspend status
SR1 Block protection status
Error '0'
SR0
SR7 = `1' Not allowed Multiple word program status (enhanced factory program mode) '1' SR7 = `0' Status '0' SR7 = `0' The device is ready for the next word
1. Logic level '1' is High, '0' is Low.
The device is NOT ready for the next word
SR7 = `1' The device is exiting EFP
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Configuration Register
8
Configuration Register
The Configuration Register configures the type of bus access that the memory performs. Refer to Section 9: Read modes for details on read operations. The Configuration Register is set through the command interface. After a reset or power-up the device is configured for asynchronous page read (CR15 = 1). The Configuration Register bits are described in Table 11. They specify the selection of the burst length, burst type, burst X latency, and the Read operation. Refer to Figures 6 and 7 for examples of synchronous burst configurations.
8.1
Read select bit (CR15)
The read select bit, CR15, switches between asynchronous and synchronous bus read operations. When the read select bit is set to '1', read operations are asynchronous; when the read select bit is set to '0', read operations are synchronous. Synchronous burst read is supported in both parameter and main blocks and can be performed across banks. On reset or power-up the read select bit is set to'1' for asynchronous access.
8.2
X latency bits (CR13-CR11)
The X latency bits are used during synchronous read operations to set the number of clock cycles between the address being latched and the first data becoming available. For correct operation the X latency bits can only assume the values in Table 11: Configuration Register. Table 10shows how to set the X latency parameter, taking into account the speed class of the device and the frequency used to read the Flash memory in synchronous mode. Table 10. Latency settings
fmax 30 MHz 40 MHz 52 MHz tKmin 33 ns 25 ns 19 ns X latency min 2 3 4
8.3
Wait polarity bit (CR10)
In synchronous burst mode the Wait signal indicates whether the output data are valid or a WAIT state must be inserted. The wait polarity bit is used to set the polarity of the Wait signal. When the wait polarity bit is set to `0' the Wait signal is active Low. When the wait polarity bit is set to `1' the Wait signal is active High.
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Configuration Register
M58WTxxxKT, M58WTxxxKB
8.4
Data output configuration bit (CR9)
The data output configuration bit determines whether the output remains valid for one or two clock cycles. When the data output configuration bit is '0' the output data is valid for one clock cycle. When the data output configuration bit is '1' the output data is valid for two clock cycles. The data output configuration depends on the condition: tK > tKQV + tQVK_CPU where tK is the clock period, tQVK_CPU is the data setup time required by the system CPU and tKQV is the clock to data valid time. If this condition is not satisfied, the data output configuration bit should be set to `1' (two clock cycles). Refer to Figure 6: X latency and data output configuration example.
8.5
Wait configuration bit (CR8)
In burst mode the Wait bit controls the timing of the Wait output pin, WAIT. When WAIT is asserted, data is not valid and when WAIT is de-asserted, data is valid. When the Wait bit is '0' the Wait output pin is asserted during the wait state. When the Wait bit is '1' the Wait output pin is asserted one clock cycle before the wait state.
8.6
Burst type bit (CR7)
The burst type bit configures the sequence of addresses read as sequential or interleaved. When the burst type bit is '0' the memory outputs from interleaved addresses. When the burst type bit is '1' the memory outputs from sequential addresses. See Table 12: Burst type definition for the sequence of addresses output from a given starting address in each mode.
8.7
Valid clock edge bit (CR6)
The valid clock edge bit, CR6, configures the active edge of the Clock, K, during synchronous burst read operations. When the valid clock edge bit is '0' the falling edge of the Clock is the active edge. When the Valid Clock Edge bit is '1' the rising edge of the Clock is active.
8.8
Wrap burst bit (CR3)
The burst reads can be confined inside the 4 or 8-word boundary (wrap) or overcome the boundary (no wrap). The wrap burst bit selects between wrap and no wrap. When the wrap burst bit is set to `0' the burst read wraps; when it is set to `1' the burst read does not wrap.
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M58WTxxxKT, M58WTxxxKB
Configuration Register
8.9
Burst length bits (CR2-CR0)
The burst length bits set the number of words to be output during a synchronous burst read operation as result of a single address latch cycle. They can be set for 4 words, 8 words, 16 words or continuous burst, where all the words are read sequentially. In continuous burst mode the burst sequence can cross bank boundaries. In continuous burst mode or in 4, 8, 16 words no-wrap, depending on the starting address, the device asserts the WAIT output to indicate that a delay is necessary before the data is output. If the starting address is aligned to a 4 word boundary no wait states are needed and the WAIT output is not asserted. If the starting address is shifted by 1, 2 or 3 positions from the 4-word boundary, WAIT is asserted for 1, 2 or 3 clock cycles when the burst sequence crosses the first 16 word boundary to indicate that the device needs an internal delay to read the successive words in the array. WAIT is asserted only once during a continuous burst access. See also Table 12: Burst type definition. CR14, CR5 and CR4 are reserved for future use.
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Configuration Register Table 11.
Bit CR15 CR14
M58WTxxxKT, M58WTxxxKB Configuration Register
Description 0 Read select 1 Reserved 010 011 100 2 clock latency 3 clock latency 4 clock latency 5 clock latency Reserved (default) Asynchronous read (default at power-on) Value Synchronous read Description
CR13-CR11
X latency 101 111
Other configurations reserved 0 CR10 Wait polarity 1 CR9 Data output configuration Wait configuration Burst type 1 CR6 CR5-CR4 CR3 Valid clock edge Reserved 0 Wrap burst 1 001 010 CR2-CR0 Burst length 011 111 16 words Continuous (CR7 must be set to `1') (default) No wrap (default) 4 words 8 words Wrap 0 1 Sequential (default) Falling Clock edge Rising Clock edge (default) 0 1 0 1 0 CR7 WAIT is active High (default) Data held for one clock cycle Data held for two clock cycles (default) WAIT is active during wait state WAIT is active one data cycle before wait state (default) Interleaved WAIT is active Low
CR8
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M58WTxxxKT, M58WTxxxKB Table 12.
Mode Start add
Configuration Register
Burst type definition
4 words 8 words 16 words Sequential Interleaved Continuous burst
Sequential Interleaved Sequential Interleaved 0-1-2-3 0-1-2-3 0-1-2-3-45-6-7 1-2-3-4-56-7-0
0
0-1-2-3-4-5-6- 0-1-2-3-4-5-60-1-2-3-4-57-8-9-10-11-12- 7-8-9-10-11- 0-1-2-3-4-5-6... 6-7 13-14-15 12-13-14-15 1-0-3-2-5-47-6 1-2-3-4-5-6-78-9-10-11-1213-14-15-0 1-0-3-2-5-4-76-9-8-11-1013-12-15-14 1-2-3-4-5-6-7...15-WAIT-1617-18... 2-3-4-5-67...15-WAITWAIT-16-1718... 3-4-5-6-7...15WAIT-WAITWAIT-16-1718...
1
1-2-3-0
1-0-3-2
2
2-3-0-1
2-3-0-1
2-3-4-5-67-0-1
2-3-4-5-6-7-8- 2-3-0-1-6-7-42-3-0-1-6-79-10-11-12-13- 5-10-11-8-94-5 14-15-0-1 14-15-12-13 3-4-5-6-7-8-910-11-12-1314-15-0-1-2 3-2-1-0-7-6-54-11-10-9-815-14-13-12
3
3-0-1-2
3-2-1-0
3-4-5-6-70-1-2
3-2-1-0-7-65-4
Wrap
... 7-0-1-2-34-5-6 7-8-9-10-11-127-8-9-10-11-12- 7-6-5-4-3-2-17-6-5-4-3-213-14-15-WAIT13-14-15-0-1-2- 0-15-14-131-0 WAIT-WAIT-1612-11-10-9-8 3-4-5-6 17...
7
7-4-5-6
7-6-5-4
... 12 13 12-13-14-1516-17-18... 13-14-15-WAIT16-17-18... 14-15-WAITWAIT-16-1718.... 15-WAIT-WAITWAIT-16-1718...
14
15
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Configuration Register Table 12.
Mode Start add
M58WTxxxKT, M58WTxxxKB
Burst type definition (continued)
4 words 8 words 16 words Sequential 0-1-2-3-4-5-67-8-9-10-11-1213-14-15 1-2-3-4-5-6-78-9-10-11-1213-14-15WAIT-16 2-3-4-5-6-7-89-10-11-12-1314-15-WAITWAIT-16-17 3-4-5-6-7-8-910-11-12-1314-15-WAITWAIT-WAIT16-17-18 Interleaved Continuous burst
Sequential Interleaved Sequential Interleaved 0-1-2-3 0-1-2-3-45-6-7
0
1
1-2-3-4
1-2-3-4-56-7-8
2
2-3-4-5
2-3-4-5-67-8-9...
3
3-4-5-6
3-4-5-6-78-9-10
... 7-8-9-1011-12-1314 7-8-9-10-11-1213-14-15WAIT-WAITWAIT-16-1718-19-20-21-22 Same as for Wrap (Wrap /No Wrap has no effect on Continuous Burst)
7 No-wrap
7-8-9-10
... 12-13-1415 12-13-1415-16-1718-19 13-14-15WAIT-1617-18-1920 14-15WAITWAIT-1617-18-1920-21 15-WAITWAITWAIT-1617-18-1920-21-22 12-13-14-1516-17-18-1920-21-22-2324-25-26-27 13-14-15WAIT-16-1718-19-20-2122-23-24-2526-27-28 14-15-WAITWAIT-16-1718-19-20-2122-23-24-2526-27-28-29 15-WAITWAIT-WAIT16-17-18-1920-21-22-2324-25-26-2728-29-30
12
13
13-14-15WAIT-16
14
14-15WAITWAIT-1617
15
15-WAITWAITWAIT-1617-18
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M58WTxxxKT, M58WTxxxKB Figure 6. X latency and data output configuration example
X-latency 1st cycle K 2nd cycle 3rd cycle 4th cycle
Configuration Register
E
L
Amax-A0(1)
VALID ADDRESS tQVK_CPU tKQV tK
DQ15-DQ0 VALID DATA VALID DATA
Ai13422b
1. Amax is equal to A20 in the M58WT032KT/B and to A21 in the M58WT064KT/B. 2. Settings shown: X latency = 4, data output held for one clock cycle.
Figure 7.
E
Wait configuration example
K
L
Amax-A0(1)
VALID ADDRESS
DQ15-DQ0
VALID DATA VALID DATA
NOT VALID
VALID DATA
WAIT CR8 = '0' CR10 = '0' WAIT CR8 = '1' CR10 = '0' WAIT CR8 = '0' CR10 = '1' WAIT CR8 = '1' CR10 = '1'
AI13423b
1. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B.
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Read modes
M58WTxxxKT, M58WTxxxKB
9
Read modes
Read operations can be performed in two different ways depending on the settings in the Configuration Register. If the clock signal is `don't care' for the data output, the read operation is asynchronous. If the data output is synchronized with clock, the read operation is synchronous. The read mode and data output format are determined by the Configuration Register (see Section 8: Configuration Register for details). All banks supports both asynchronous and synchronous read operations. The multiple bank architecture allows read operations in one bank, while write operations are being executed in another (see Tables 13 and 14).
9.1
Asynchronous read mode
In asynchronous read operations the clock signal is `don't care'. The device outputs the data corresponding to the address latched, that is the memory array, Status Register, common Flash interface or electronic signature, depending on the command issued. CR15 in the Configuration Register must be set to `1' for asynchronous operations. In asynchronous read mode a page of data is internally read and stored in a page buffer. The page has a size of 4 words and is addressed by A0 and A1 address inputs. The address inputs A0 and A1 are not gated by Latch Enable in asynchronous read mode. The first read operation within the page has a longer access time (Tacc, random access time), and subsequent reads within the same page have much shorter access times. If the page changes then the normal, longer timings apply again. Asynchronous read operations can be performed in two different ways, Asynchronous random access read and asynchronous page read. Only asynchronous page read takes full advantage of the internal page storage so different timings are applied. During asynchronous read operations, after a bus inactivity of 150 ns, the device automatically switches to automatic standby mode. In this condition the power consumption is reduced to the standby value and the outputs are still driven. In asynchronous read mode, the WAIT signal is always asserted. See Table 23: Asynchronous read AC characteristics, Figure 10: Asynchronous random access read AC waveforms and Figure 11: Asynchronous page read AC waveforms for details.
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M58WTxxxKT, M58WTxxxKB
Read modes
9.2
Synchronous burst read mode
In synchronous burst read mode the data is output in bursts synchronized with the clock. It is possible to perform burst reads across bank boundaries. Synchronous burst read mode can only be used to read the memory array. For other read operations, such as read Status Register, read CFI, and read electronic signature, single synchronous read or asynchronous random access read must be used. In synchronous burst read mode the flow of the data output depends on parameters that are configured in the Configuration Register. A burst sequence is started at the first clock edge (rising or falling depending on valid clock edge bit CR6 in the Configuration Register) after the falling edge of Latch Enable or Chip Enable, whichever occurs last. Addresses are internally incremented and after a delay of 2 to 5 clock cycles (X latency bits CR13-CR11) the corresponding data is output on each clock cycle. The number of words to be output during a synchronous burst read operation can be configured as 4, 8, 16 words, or continuous (burst length bits CR2-CR0). The data can be configured to remain valid for one or two clock cycles (data output configuration bit CR9). The order of the data output can be modified through the burst type and the wrap burst bits in the Configuration Register. The burst sequence may be configured to be sequential or interleaved (CR7). The burst reads can be confined inside the 4, 8 or 16 word boundary (wrap) or overcome the boundary (no wrap). If the starting address is aligned to the burst length (4, 8 or 16 words) the wrapped configuration has no impact on the output sequence. Interleaved mode is not allowed in continuous burst read mode or with no wrap sequences. A WAIT signal may be asserted to indicate to the system that an output delay occurs. This delay depends on the starting address of the burst sequence. The worst case delay occurs when the sequence is crossing a 16-word boundary and the starting address was at the end of a four word boundary. WAIT is asserted during X latency, the Wait state, and at the end of 4-, 8- or 16-word burst. It is only de-asserted when output data are valid. In continuous burst read mode a Wait state occurs when crossing the first 16-word boundary. If the burst starting address is aligned to a 4-word page, the Wait state does not occur. The WAIT signal can be configured to be active Low or active High by setting CR10 in the Configuration Register. The WAIT signal is meaningful only in synchronous burst read mode. In other modes, WAIT is always asserted (except for read array mode). See Table 24: Synchronous read AC characteristics and Figure 12: Synchronous burst read AC waveforms for details.
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Read modes
M58WTxxxKT, M58WTxxxKB
9.3
Synchronous burst read suspend
A synchronous burst read operation can be suspended, freeing the data bus for other higher priority devices. It can be suspended during the initial access latency time (before data is output), or after the device has output data. When the synchronous burst read operation is suspended, internal array sensing continues and any previously latched internal data is retained. A burst sequence can be suspended and resumed as often as required as long as the operating conditions of the device are met. A synchronous burst read operation is suspended when E is low and the current address has been latched (on a Latch Enable rising edge or on a valid clock edge). The clock signal is then halted at VIH or at VIL, and G goes high. When G becomes low again and the clock signal restarts, the synchronous burst read operation is resumed exactly where it stopped. WAIT being gated by E remains active and does not revert to high-impedance when G goes high. Therefore, if two or more devices are connected to the system's READY signal, to prevent bus contention the WAIT signal of the Flash memory should not be directly connected to the system's READY signal. See Table 24: Synchronous read AC characteristics and Figure 14: Synchronous burst read suspend AC waveforms for details.
9.4
Single synchronous read mode
Single synchronous read operations are similar to synchronous burst read operations except that only the first data output after the X latency is valid. Synchronous single reads are used to read the electronic signature, Status Register, CFI, block protection status, Configuration Register status or Protection Register status. When the addressed bank is in read CFI, read Status Register or read electronic signature mode, the WAIT signal is always asserted. See Table 24: Synchronous read AC characteristics and Figure 13: Single synchronous read AC waveforms for details.
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M58WTxxxKT, M58WTxxxKB
Dual operations and multiple bank architecture
10
Dual operations and multiple bank architecture
The multiple bank architecture of the M58WTxxxKT/B provides flexibility for software developers by allowing code and data to be split with 4 Mbit granularity. The dual operations feature simplifies the software management of the device and allows code to be executed from one bank while another bank is being programmed or erased. The dual operations feature means that while programming or erasing in one bank, read operations are possible in another bank with zero latency (only one bank at a time is allowed to be in program or erase mode). If a Read operation is required in a bank that is programming or erasing, the program or erase operation can be suspended. Also, if the suspended operation is erase then a program command can be issued to another block. This means the device can have one block in erase suspend mode, one programming, and other banks in read mode. Bus read operations are allowed in another bank between setup and confirm cycles of program or erase operations. The combination of these features means that read operations are possible at any moment. Dual operations between the parameter bank and either the CFI, OTP, or the electronic signature memory space are not allowed. Table 15, however, shows dual operations that are allowed between the CFI, OTP, electronic signature locations, and the memory array. Tables 13 and 14 show the dual operations possible in other banks and in the same bank. For a complete list of possible commands refer to Appendix D: Command interface state tables. Table 13. Dual operations allowed in other banks
Commands allowed in another bank Status of bank Read Array Yes Yes Yes Yes Yes Read Read Read Program/ Program/ Block Status CFI Electronic Program Erase Erase Erase Register Query Signature Suspend Resume Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes - - - Yes Yes - - - - Yes Yes Yes - - Yes - - Yes Yes
Idle Programming Erasing Program suspended Erase suspended
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Dual operations and multiple bank architecture Table 14. Dual operations allowed in same bank
M58WTxxxKT, M58WTxxxKB
Commands allowed in same bank Status of bank Read Read Status CFI Register Query Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Read Program/ Program/ Electroni Block Program Erase Erase c Erase Suspend Resume Signature Yes Yes Yes Yes Yes Yes - - - Yes(1) Yes - - - - Yes Yes Yes - - Yes - - Yes Yes
Read Array Yes -(2) -
(2)
Idle Programming Erasing Program suspended Erase suspended
Yes(1) Yes(1)
1. Not allowed in the block or word that is being erased or programmed. 2. The Read Array command is accepted but the data output is no guaranteed until the program or erase has completed.
Table 15.
Dual operation limitations
Commands allowed Read Main Blocks
Current status
Read CFI / OTP / Read Electronic Parameter Signature Blocks
Located in parameter bank No No Yes No
Not located in parameter bank Yes Yes In different bank only No
Programming/erasing parameter blocks Located in Programming/ parameter bank erasing main Not located in blocks parameter bank Programming OTP
No Yes Yes No
No No Yes No
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M58WTxxxKT, M58WTxxxKB
Block locking
11
Block locking
The M58WTxxxKT/B features an instant, individual block locking scheme that enables any block to be locked or unlocked with no latency. This locking scheme has three levels of protection.

Lock/unlock - this first level allows software-only control of block locking. Lock-down - this second level requires hardware interaction before locking can be changed. VPP VPPLK - the third level offers a complete hardware protection against program and erase on all blocks.
The protection status of each block can be set to locked, unlocked, and lock-down. Table 16, defines all of the possible protection states (WP, DQ1, DQ0), and Appendix C, Figure 26, shows a flowchart for the locking operations.
11.1
Reading a block's lock status
The lock status of every block can be read in the read electronic signature mode of the device. To enter this mode write 90h to the device. Subsequent reads at the address specified in Table 7 output the protection status of that block. The lock status is represented by DQ0 and DQ1. DQ0 indicates the block lock/unlock status and is set by the Lock command and cleared by the Unlock command. It is also automatically set when entering lock-down. DQ1 indicates the lock-down status and is set by the Lock-Down command. It cannot be cleared by software, only by a hardware reset or power-down. The following sections explain the operation of the locking system.
11.2
Locked state
The default status of all blocks on power-up or after a hardware reset is locked (states (0,0,1) or (1,0,1)). Locked blocks are fully protected from any program or erase. Any program or erase operations attempted on a locked block returns an error in the Status Register. The status of a locked block can be changed to unlocked or lock-down using the appropriate software commands. An unlocked block can be locked by issuing the Lock command.
11.3
Unlocked state
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)), can be programmed or erased. All unlocked blocks return to the locked state after a hardware reset or when the device is powered-down. The status of an unlocked block can be changed to locked or locked-down using the appropriate software commands. A locked block can be unlocked by issuing the Unlock command.
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Block locking
M58WTxxxKT, M58WTxxxKB
11.4
Lock-down state
Blocks that are locked-down (state (0,1,x)) are protected from program and erase operations (as for locked blocks) but their protection status cannot be changed using software commands alone. A locked or unlocked block can be locked-down by issuing the Lock-Down command. Locked-down blocks revert to the locked state when the device is reset or powered-down. The lock-down function is dependent on the WP input pin. When WP=0 (VIL), the blocks in the lock-down state (0,1,x) are protected from program, erase and protection status changes. When WP=1 (VIH) the lock-down function is disabled (1,1,x) and locked-down blocks can be individually unlocked to the (1,1,0) state by issuing the software command, where they can be erased and programmed. These blocks can then be re-locked (1,1,1) and unlocked (1,1,0) as desired while WP remains high. When WP is Low, blocks that were previously locked-down return to the lock-down state (0,1,x) regardless of any changes made while WP was High. Device reset or power-down resets all blocks, including those in lock-down, to the locked state.
11.5
Locking operations during erase suspend
Changes to block lock status can be performed during an erase suspend by using the standard locking command sequences to unlock, lock or lock down a block. This is useful in the case when another block needs to be updated while an erase operation is in progress. To change block locking during an erase operation, first write the Erase Suspend command, then check the status register until it indicates that the erase operation has been suspended. Next ,write the desired lock command sequence to a block and the lock status changes. After completing any desired lock, read, or program operations, resume the erase operation with the Erase Resume command. If a block is locked or locked down during an erase suspend of the same block, the locking status bits change immediately. But when the erase is resumed, the erase operation completes. Locking operations cannot be performed during a program suspend. Refer to Appendix D: Command interface state tables for detailed information on which commands are valid during erase suspend.
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M58WTxxxKT, M58WTxxxKB Table 16. Lock status
Next protection status(1) (WP, DQ1, DQ0) After Block Unlock command 1,0,0 1,0,0 1,1,0 1,1,0 0,0,0 0,0,0 0,1,1 After Block Lock-Down command 1,1,1 1,1,1 1,1,1 1,1,1 0,1,1 0,1,1 0,1,1
Block locking
Current protection status(1) (WP, DQ1, DQ0) Program/erase After Block allowed Lock command yes no yes no yes no no 1,0,1 1,0,1 1,1,1 1,1,1 0,0,1 0,0,1 0,1,1
Current state 1,0,0 1,0,1(2) 1,1,0 1,1,1 0,0,0 0,0,1(2) 0,1,1
After WP transition 0,0,0 0,0,1 0,1,1 0,1,1 1,0,0 1,0,1 1,1,1 or 1,1,0(3)
1. The lock status is defined by the write protect pin and by DQ1 (`1' for a locked-down block) and DQ0 (`1' for a locked block) as read in the Read Electronic Signature command with A1 = VIH and A0 = VIL. 2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status. 3. A WP transition to VIH on a locked block restores the previous DQ0 value, giving a 111 or 110.
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Program and erase times and endurance cycles
M58WTxxxKT, M58WTxxxKB
12
Program and erase times and endurance cycles
The program and erase times and the number of program/ erase cycles per block are shown in Table 17. Exact erase times may change depending on the memory array condition. The best case is when all the bits in the block or bank are at `0' (preprogrammed). The worst case is when all the bits in the block or bank are at `1' (not preprogrammed). Usually, the system overhead is negligible with respect to the erase time. In the M58WTxxxKT/B the maximum number of program/ erase cycles depends on the VPP voltage supply used.
Table 17.
Program/erase times and endurance cycles(1)
Parameter Condition Min Typ 0.3 0.8 1 12 40 300 5 5 100 000 100 000 0.25 0.8 10 11 45 10 40 94 360 80 328 0.75 0.65 word(4) 2.5 4 100 10 20 12 Typical after 100 k Max W/E cycles 1 3 2.5 4 4 100 Unit s s s s ms ms s s cycles cycles s s s ms ms ms ms ms ms ms ms s s 1000 cycles 2500 cycles
Parameter block (4 Kword)(2) Erase Main block (32 Preprogrammed Kword) Not preprogrammed Word Program(3) Parameter block (4 Kword) Main block (32 Kword) Suspend latency Program Erase
VPP = VDD
Main blocks Program/Erase Cycles (per Block) Parameter blocks Erase Parameter block (4 Kword) Main block (32 Kword) Word/ double word/ quadruple word(4) Quad-enhanced factory Enhanced factory Parameter block (4 Kword) Quadruple word(4) VPP = VPPH Word Program(3) Main block ( 32 Kword) Quad-enhanced factory Enhanced factory Quadruple word Word Bank (4 Mbit) Program/erase cycles (per block) Main blocks Parameter blocks Quad-enhanced factory(4) Quadruple
(4)
1. TA = -40 to 85 C; VDD = VDDQ = 1.7 V to 2 V; VDDQ = 2.7 V to 3.3 V. 2. The difference between preprogrammed and not preprogrammed is not significant (< 30 ms). 3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 4. Measurements performed at 25C. TA = 30 C 10 C for quadruple word, double word and quadruple enhanced factory program.
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M58WTxxxKT, M58WTxxxKB
Maximum ratings
13
Maximum ratings
Stressing the device above the ratings listed in Table 18: Absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the Numonyx SURE Program and other relevant quality documents. Table 18.
Symbol TA TBIAS TSTG VIO VDD VDDQ VPP IO tVPPH
Absolute maximum ratings
Value Parameter Min Ambient operating temperature Temperature under bias Storage temperature Input or output voltage Supply voltage Input/output supply voltage Program voltage Output short circuit current Time for VPP at VPPH -40 -40 -65 -0.5 -0.2 -0.2 -0.2 Max 85 125 155 VDDQ + 0.6 2.45 3.6 10 100 100 C C C V V V V mA hours Unit
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DC and AC parameters
M58WTxxxKT, M58WTxxxKB
14
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables in this section are derived from tests performed under the measurement conditions summarized in Table 19: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 19. Operating and AC measurement conditions
Parameter VDD supply voltage VDDQ supply voltage VPP supply voltage (factory environment) VPP supply voltage (application environment) Ambient operating temperature Load capacitance (CL) Input rise and fall times Input pulse voltages Input and output timing ref. voltages Min 1.7 2.7 8.5 -0.4 -40 30 5 0 to VDDQ VDDQ/2 Max 2 3.3 9.5 VDDQ+0.4 85 Unit V V V V C pF ns V V
Figure 8.
AC measurement I/O waveform
VDDQ VDDQ/2 0V
AI06161
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M58WTxxxKT, M58WTxxxKB Figure 9. AC measurement load circuit
VDDQ
DC and AC parameters
VDDQ VDD 16.7k DEVICE UNDER TEST 0.1F 0.1F CL 16.7k
CL includes JIG capacitance
AI06162
Table 20.
Symbol CIN COUT
Capacitance(1)
Parameter Input capacitance Output capacitance Test condition VIN = 0 V VOUT = 0 V Min 6 8 Max 8 12 Unit pF pF
1. Sampled only, not 100% tested.
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DC and AC parameters Table 21.
Symbol ILI ILO
M58WTxxxKT, M58WTxxxKB DC characteristics - currents
Parameter Test condition 0V VIN VDDQ 0V VOUT VDDQ E = VIL, G = VIH 4 word 10 18 20 25 28 15 15 15 8 15 8 15 25 Min Typ Max 2 10 20 20 22 27 30 50 50 50 15 40 15 40 60 Unit A A mA mA mA mA mA A A A mA mA mA mA mA
Input leakage current Output leakage current Supply current asynchronous read (f = 5 MHz)
IDD1
Supply current synchronous Read (f = 52 MHz)
8 word 16 word Continuous
IDD2 IDD3 IDD4
Supply current (reset/power-down) Supply current (standby) Supply current (automatic standby) Supply current (program)
RP = VSS 0.2 V E = VDDQ 0.2 V, K = VSS E = VIL, G = VIH VPP = VPPH VPP = VDD VPP = VPPH VPP = VDD Program/erase in one bank, asynchronous read in another bank Program/erase in one bank, synchronous read (continuous burst 66 MHz) in another bank E = VDDQ 0.2 V, K = VSS VPP = VPPH VPP = VDD VPP = VPPH VPP = VDD VPP = VPPH VPP VDD VPP VDD
IDD5(1) Supply current (erase)
IDD6(1)(2)
Supply current (dual operations)
43
70
mA
IDD7(1)
Supply current program/ erase suspended (standby) VPP supply current (program)
15 5 0.2 5 0.2 100 0.2 0.2
50 10 5 10 5 400 5 5
A mA A mA A A A A
IPP1(1) VPP supply current (erase) IPP2 IPP3(1) VPP supply current (read) VPP supply current (standby)
1. Sampled only, not 100% tested. 2. VDD dual operation current is the sum of read and program or erase currents.
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M58WTxxxKT, M58WTxxxKB Table 22.
Symbol VIL VIH VOL VOH VPP1 VPPH VPPLK VLKO
DC and AC parameters
DC characteristics - voltages
Parameter Input low voltage Input high voltage Output low voltage Output high voltage VPP program voltage-logic VPP program voltage factory Program or erase lockout VDD lock voltage IOL = 100 A IOH = -100 A Program, erase Program, erase VDDQ -0.1 1.3 8.5 9 3.3 9.5 0.4 1 Test condition Min -0.5 VDDQ -0.4 Typ Max 0.4 VDDQ + 0.4 0.1 Unit V V V V V V V V
Figure 10. Asynchronous random access read AC waveforms
A0-Amax(1)
VALID tAVAV tAVLH tLHAX tAXQX
VALID
L tLLLH tLLQV tELLH tELQV E tELQX tEHQZ tEHQX G tGLQV tGLQX Hi-Z WAIT tAVQV DQ0-DQ15 Hi-Z VALID tELTV tGHQX tGHQZ tEHTZ tLHGL
Valid Address Latch
Outputs Enabled
Data Valid
Standby
AI13424b
1. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B. 2. Write Enable, W, is High, WAIT is active Low.
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VALID ADDRESS tAVAV VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS tAVLH tLHAX tLLLH tLLQV tELLH tLHGL tELQV tELQX
DC and AC parameters
A2-Amax(1)
A0-A1
L
E
Figure 11. Asynchronous page read AC waveforms
G
WAIT (2)
Hi-Z
tELTV
tGLQV tGLQX VALID DATA tAVQV1 VALID DATA VALID DATA VALID DATA
DQ0-DQ15
Valid Address Latch
Outputs Enabled
Valid Data
Standby
M58WTxxxKT, M58WTxxxKB
Notes: 1. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B. 2. WAIT is active Low.
AI13425c
M58WTxxxKT, M58WTxxxKB Table 23.
Symbol tAVAV tAVQV tAVQV1 tAXQX(1) tELTV Read Timings tELQV(2) tELQX(1) tEHTZ tEHQX(1) tEHQZ
(1)
DC and AC parameters
Asynchronous read AC characteristics
Alt tRC tACC tPAGE tOH Parameter Address Valid to Next Address Valid Address Valid to Output Valid (Random) Address Valid to Output Valid (page) Address Transition to Output Transition Chip Enable Low to Wait Valid tCE tLZ Chip Enable Low to Output Valid Chip Enable Low to Output Transition Chip Enable High to Wait Hi-Z tOH tHZ tOE tOLZ tOH tDF tAVADVH tELADVH tADVHAX Chip Enable High to Output Transition Chip Enable High to Output Hi-Z Output Enable Low to Output Valid Output Enable Low to Output Transition Output Enable High to Output Transition Output Enable High to Output Hi-Z Address Valid to Latch Enable High Chip Enable Low to Latch Enable High Latch Enable High to Address Transition Min Max Max Min Max Max Min Max Min Max Max Min Min Max Min Min Min Min Max Min Value 70 70 25 0 20 70 0 25 0 20 30 0 0 14 10 10 9 10 70 0 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tGLQV(2) tGLQX(1) tGHQX(1) tGHQZ(1) tAVLH Latch Timings tELLH tLHAX tLLLH tLLQV tLHGL
tADVLADVH Latch Enable Pulse Width tADVLQV tADVHGL Latch Enable Low to Output Valid (Random) Latch Enable High to Output Enable Low
1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
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VALID VALID tKHQX VALID tKHQV NOT VALID VALID tLLLH tEHQX tEHQZ Note 1 tKHAX tEHEL
DC and AC parameters
DQ0-DQ15
Hi-Z
A0-Amax(4)
VALID ADDRESS
tAVLH
L
tLLKH
tAVKH
K(3)
tELKH
E tGHQX tGLQX tGHQZ
Figure 12. Synchronous burst read AC waveforms
G tKHTV Note 2 tKHTX Note 2 Note 2 Valid Valid Data Flow Data tEHTZ
tELTV
Hi-Z
WAIT X Latency
Address Latch
Boundary Crossing
Standby
M58WTxxxKT, M58WTxxxKB
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register. 2. The WAIT signal can be configured to be active during wait state or one cycle before. WAIT signal is active Low. 3. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, K, can be configured as the active edge. Here the active edge of K is the rising one. 4. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B.
AI13426c
DQ0-DQ15
Hi-Z VALID NOT VALID NOT VALID NOT VALID NOT VALID NOT VALID
M58WTxxxKT, M58WTxxxKB
A0-Amax(5)
VALID ADDRESS
tAVLH tLLLH
L tEHQX tKHQV Note 1 tKHAX tEHEL tEHQZ
tLLKH
tAVKH
K(4)
tELKH
E tGLQX tGLQV tGHQX tGHQZ
Figure 13. Single synchronous read AC waveforms
G tELTV tKHTV Note 3 tEHTZ
WAIT(2)
Hi-Z
DC and AC parameters
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register. 2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low. 3. WAIT is always asserted when addressed bank is in Read CFI, Read SR or Read electronic signature mode. WAIT signals valid data if the addressed bank is in Read Array mode. 4. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, K, can be configured as the active edge. Here the active edge of K is the rising one. 5. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B.
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AI13427c
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VALID VALID VALID VALID tLLLH tEHQX tKHQV Note 1 Note 3 tEHEL tEHQZ tGLQX tGLQV tGHQZ tGHQX
Hi-Z
DC and AC parameters
DQ0-DQ15
A0-Amax(5)
VALID ADDRESS
tAVLH
L
tLLKH
tAVKH
K(4)
tELKH
tKHAX
E
G tEHTZ
Figure 14. Synchronous burst read suspend AC waveforms
tELTV
Hi-Z
WAIT(2)
M58WTxxxKT, M58WTxxxKB
Note 1. The number of clock cycles to be inserted depends on the X latency set in the Configuration Register. 2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low. 3. The CLOCK signal can be held High or Low 4. Address latched and data output on the rising clock edge. Either the rising or the falling edge of the clock signal, K, can be configured as the active edge. Here, the active edge is the rising one. 5. Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B.
AI13428c
M58WTxxxKT, M58WTxxxKB Figure 15. Clock input AC waveform
tKHKL
DC and AC parameters
tKHKH
tf
tr
tKLKH
AI06981
Table 24.
Symbol tAVKH tELKH Synchronous read timings tELTV tEHEL tEHTZ tKHAX tKHQV tKHTV tKHQX tKHTX tLLKH Clock specifications tKHKH tKHKL tKLKH tf tr
Synchronous read AC characteristics(1) (2)
Alt tAVCLKH tELCLKH Parameter Address Valid to Clock High Chip Enable Low to Clock High Chip Enable Low to Wait Valid Chip Enable Pulse Width (subsequent synchronous reads) Chip Enable High to Wait Hi-Z tCLKHAX tCLKHQV tCLKHQX tADVLCLKH tCLK Clock High to Address Transition Clock High to Output Valid Clock High to WAIT Valid Clock High to Output Transition Clock High to WAIT Transition Latch Enable Low to Clock High Clock Period (f=52MHz) Clock High to Clock Low Clock Low to Clock High Clock Fall or Rise Time Min Min Max Min Max Min Max Min Min Min Min Value 9 9 20 20 20 10 17 3 9 19 9.5 Unit ns ns ns ns ns ns ns ns ns ns ns
Max
3
ns
1. Sampled only, not 100% tested. 2. For other timings please refer to Table 23: Asynchronous read AC characteristics.
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PROGRAM OR ERASE tAVAV BANK ADDRESS VALID ADDRESS tAVWH tWHAV tWHAX VALID ADDRESS tLHAX tLLLH tWHLL tWHEH tWHWL tWHGL tWLWH tWHDX COMMAND CMD or DATA tWHWPL tWPHWH tQVWPL STATUS REGISTER tWHEL tELQV tWHVPL tVPHWH tQVVPL tELKV CONFIRM COMMAND OR DATA INPUT STATUS REGISTER READ 1st POLLING
Ai13429c
A0-Amax(1)
tAVLH
DC and AC parameters
L
tELLH
E
tELWL
G
tGHWL
W
tDVWH
Figure 16. Write AC waveforms, Write Enable controlled
DQ0-DQ15
WP
VPP
K
SET-UP COMMAND
M58WTxxxKT, M58WTxxxKB
Note 1: Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58WT064KT/B.
M58WTxxxKT, M58WTxxxKB Table 25.
Symbol tAVAV tAVLH tAVWH(2) tDVWH tELLH tELWL Write Enable controlled timings tELQV tELKV tGHWL tLHAX tLLLH tWHAV(2) tWHAX(2) tWHDX tWHEH tWHEL(3) tWHGL tWHLL(3) tWHWL tWLWH tQVVPL Protection timings tQVWPL tVPHWH tWHVPL tWHWPL tWPHWH tVPS tAH tDH tCH tCS tDS
DC and AC parameters
Write AC characteristics, Write Enable controlled(1)
Alt tWC Parameter Address Valid to Next Address Valid Address Valid to Latch Enable High Address Valid to Write Enable High Data Valid to Write Enable High Chip Enable Low to Latch Enable High Chip Enable Low to Write Enable Low Chip Enable Low to Output Valid Chip Enable Low to Clock Valid Output Enable High to Write Enable Low Latch Enable High to Address Transition Latch Enable Pulse Width Write Enable High to Address Valid Write Enable High to Address Transition Write Enable High to Input Transition Write Enable High to Chip Enable High Write Enable High to Chip Enable Low Write Enable High to Output Enable Low Write Enable High to Latch Enable Low tWPH Write Enable High to Write Enable Low tWP Write Enable Low to Write Enable High Output (Status Register) Valid to VPP Low Output (Status Register) Valid to Write Protect Low VPP High to Write Enable High Write Enable High to VPP Low Write Enable High to Write Protect Low Write Protect High to Write Enable High Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Value 70 10 45 45 10 0 70 9 17 9 10 0 0 0 0 25 0 25 25 45 0 0 200 200 200 200 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
1. Sampled only, not 100% tested. 2. Meaningful only if L is always kept low. 3. tWHEL and tWHLL have this value when reading in the targeted bank or when reading following a Set Configuration Register command. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing any command and to delay the first read to any address after issuing a Set Configuration Register command. If the first read after the command is a Read Array operation in a different bank and no changes to the Configuration Register have been issued, tWHEL and tWHLL are 0ns.
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PROGRAM OR ERASE tAVAV BANK ADDRESS tLHAX tAVEH tEHAX tLLLH VALID ADDRESS VALID ADDRESS tELLH tEHWH tGHEL tEHEL tEHGL tELEH tEHDX COMMAND CMD or DATA tEHWPL tWPHEH tQVWPL STATUS REGISTER tWHEL tELQV tEHVPL tVPHEH tQVVPL tELKV CONFIRM COMMAND OR DATA INPUT STATUS REGISTER READ 1st POLLING
Ai13430c
A0-Amax(1)
tAVLH
DC and AC parameters
L
W
tWLEL
G
E
tDVEH
Figure 17. Write AC waveforms, Chip Enable controlled
DQ0-DQ15
WP
VPP
K
SET-UP COMMAND
M58WTxxxKT, M58WTxxxKB
Note 1: Amax is equal to A20 in the M58WT032KT/B and, to A21 in the M58TR064KT/B.
M58WTxxxKT, M58WTxxxKB Table 26.
Symbol tAVAV tAVEH tAVLH tDVEH tEHAX Chip Enable controlled timings tEHDX tEHEL tEHGL tEHWH tELKV tELEH tELLH tELQV tGHEL tLHAX tLLLH tWHEL(2) tWLEL tEHVPL Protection timings tEHWPL tQVVPL tQVWPL tVPHEH tWPHEH tCS tCP tCH tDS tAH tDH
DC and AC parameters
Write AC characteristics, Chip Enable controlled(1)
Alt tWC Parameter Address Valid to Next Address Valid Address Valid to Chip Enable High Address Valid to Latch Enable High Data Valid to Chip Enable High Chip Enable High to Address Transition Chip Enable High to Input Transition Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Value 70 45 10 45 0 0 25 0 0 9 45 10 70 17 9 10 25 0 200 200 0 0 200 200 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tCPH Chip Enable High to Chip Enable Low Chip Enable High to Output Enable Low Chip Enable High to Write Enable High Chip Enable Low to Clock Valid Chip Enable Low to Chip Enable High Chip Enable Low to Latch Enable High Chip Enable Low to Output Valid Output Enable High to Chip Enable Low Latch Enable High to Address Transition Latch Enable Pulse Width Write Enable High to Chip Enable Low Write Enable Low to Chip Enable Low Chip Enable High to VPP Low Chip Enable High to Write Protect Low Output (Status Register) Valid to VPP Low Output (Status Register) Valid to Write Protect Low tVPS VPP High to Chip Enable High Write Protect High to Chip Enable High
1. Sampled only, not 100% tested. 2. tWHEL has this value when reading in the targeted bank or when reading following a Set Configuration Register command. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing any command and to delay the first read to any address after issuing a Set Configuration Register command. If the first read after the command is a read array operation in a different bank and no changes to the Configuration Register have been issued, tWHEL is 0 ns.
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DC and AC parameters Figure 18. Reset and power-up AC waveforms
M58WTxxxKT, M58WTxxxKB
W, E, G, L
tPHWL tPHEL tPHGL tPHLL
tPLWL tPLEL tPLGL tPLLL
RP tVDHPH VDD, VDDQ Power-Up Reset
AI06976
tPLPH
Table 27.
Symbol tPLWL tPLEL tPLGL tPLLL tPHWL tPHEL tPHGL tPHLL tPLPH(1),(2) tVDHPH(3)
Reset and power-up AC characteristics
Parameter Reset Low to Write Enable Low, Reset Low to Chip Enable Low, Reset Low to Output Enable Low, Reset Low to Latch Enable Low Reset High to Write Enable Low Reset High to Chip Enable Low Reset High to Output Enable Low Reset High to Latch Enable Low RP pulse width Supply Voltages High to Reset High Test condition During program During erase Other conditions Min Min Min Value 10 20 80 Unit s s ns
Min
30
ns
Min Min
50 200
ns s
1. The device Reset is possible but not guaranteed if tPLPH < 50 ns. 2. Sampled only, not 100% tested. 3. It is important to assert RP in order to allow proper CPU initialization during power-up or reset.
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M58WTxxxKT, M58WTxxxKB
Package mechanical
15
Package mechanical
To meet environmental requirements, Numonyx offers the M58WTxxxKT/B in ECOPACK(R) packages, which have a lead-free, second-level interconnect. In compliance with JEDEC Standard JESD97, the category of second-level interconnect is marked on the package and on the inner box label. The maximum ratings related to soldering conditions are also marked on the inner box label. Figure 19. TFBGA88 8 x 10 mm, 8 x 10 ball array, 0.8 mm, package outline
D D1
e SE E E2 E1 b BALL "A1"
ddd FE FE1 A A1 FD SD A2
BGA-Z42
1. Drawing is not to scale.
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Package mechanical Table 28.
M58WTxxxKT, M58WTxxxKB TFBGA88 8 x 10 mm, 8 x 10 ball array, 0.8 mm pitch, package mechanical data
Millimeters Inches Max 1.200 0.200 0.850 0.350 8.000 5.600 0.100 10.000 7.200 8.800 0.800 1.200 1.400 0.600 0.400 0.400 - - 9.900 10.100 0.3937 0.2835 0.3465 0.0315 0.0472 0.0551 0.0236 0.0157 0.0157 - - 0.3898 0.300 7.900 0.400 8.100 0.0335 0.0138 0.3150 0.2205 0.0039 0.3976 0.0118 0.3110 0.0157 0.3189 0.0079 Typ Min Max 0.0472
Symbol Typ A A1 A2 b D D1 ddd E E1 E2 e FD FE FE1 SD SE Min
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M58WTxxxKT, M58WTxxxKB
Part numbering
16
Part numbering
Table 29.
Example: Device type M58 Architecture W = Multiple bank, burst mode Operating voltage T = VDD = 1.8 V to 2 V ; VDDQ = 2.7 V to 3.3 V Density 032 = 32 Mbit (x16) 064 = 64 Mbit (x16) Technology K = 65 nm technology Parameter bank location T = top boot B = bottom boot Speed 70 = 70 ns Package ZAQ = TFBGA88 8 x 10 mm, 0.80 mm pitch, quadruple stacked footprint Temperature range 6 = -40 to 85 C Options E = ECOPACK(R) package, standard packing F = ECOPACK(R) package, tape and reel packing
Ordering information scheme
M58WT032KT 70 ZAQ 6 E
Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (speed, etc.) or for further information on any aspect of this device, please contact the nearest Numonyx sales office.
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Block address tables
M58WTxxxKT, M58WTxxxKB
Appendix A
Table 30.
Block address tables
Top boot block addresses, M58WT032KT
# 0 1 2 3 4 Parameter bank 5 6 7 8 9 10 11 12 13 14 15 16 17 Bank 1 18 19 20 21 22 23 24 25 Bank 2 26 27 28 29 30 Size (Kword) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 1FF000-1FFFFF 1FE000-1FEFFF 1FD000-1FDFFF 1FC000-1FCFFF 1FB000-1FBFFF 1FA000-1FAFFF 1F9000-1F9FFF 1F8000-1F8FFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 190000-197FFF 188000-18FFFF 180000-187FFF 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF
Bank(1)
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M58WTxxxKT, M58WTxxxKB Table 30.
Block address tables
Top boot block addresses, M58WT032KT (continued)
# 31 32 33 Bank 3 34 35 36 37 38 39 40 41 Bank 4 42 43 44 45 46 47 48 49 Bank 5 50 51 52 53 54 55 56 57 Bank 6 58 59 60 61 62 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F8000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF
Bank(1)
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Block address tables Table 30.
M58WTxxxKT, M58WTxxxKB Top boot block addresses, M58WT032KT (continued)
# 63 64 65 Bank 7 66 67 68 69 70 Size (Kword) 32 32 32 32 32 32 32 32 Address range 038000-03FFFF 030000-037FFF 028000-02FFFF 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 000000-007FFF
Bank(1)
1. There are two Bank Regions: Bank Region 1 contains all the banks that are made up of main blocks only; Bank Region 2 contains the banks that are made up of the parameter and main blocks (parameter bank).
Table 31.
Bottom boot block addresses, M58WT032KB
# 70 69 68 Bank 7 67 66 65 64 63 62 61 60 Bank 6 59 58 57 56 55 54 53 52 Bank 5 51 50 49 48 47 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 190000-197FFF 188000-18FFFF 180000-187FFF 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF
Bank(1)
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M58WTxxxKT, M58WTxxxKB Table 31.
Block address tables
Bottom boot block addresses, M58WT032KB (continued)
# 46 45 44 Bank 4 43 42 41 40 39 38 37 36 Bank 3 35 34 33 32 31 30 29 28 Bank 2 27 26 25 24 23 22 21 20 Bank 1 19 18 17 16 15 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F8000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF
Bank(1)
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Block address tables Table 31.
M58WTxxxKT, M58WTxxxKB Bottom boot block addresses, M58WT032KB (continued)
# 14 13 12 11 10 Parameter Bank 9 8 7 6 5 4 3 2 1 0 Size (Kword) 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 Address range 038000-03FFFF 030000-037FFF 028000-02FFFF 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 007000-007FFF 006000-006FFF 005000-005FFF 004000-004FFF 003000-003FFF 002000-002FFF 001000-001FFF 000000-000FFF
Bank(1)
1. There are two bank regions: bank region 2 contains all the banks that are made up of main blocks only; bank region 1 contains the banks that are made up of the parameter and main blocks (parameter bank).
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M58WTxxxKT, M58WTxxxKB Table 32. Top boot block addresses, M58WT064KT
# 0 1 2 3 4 Parameter bank 5 6 7 8 9 10 11 12 13 14 15 16 17 Bank 1 18 19 20 21 22 23 24 25 Bank 2 26 27 28 29 30 31 32 33 Bank 3 34 35 36 37 38 Size (Kword) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32
Block address tables
Bank(1)
Address range 3FF000-3FFFFF 3FE000-3FEFFF 3FD000-3FDFFF 3FC000-3FCFFF 3FB000-3FBFFF 3FA000-3FAFFF 3F9000-3F9FFF 3F8000-3F8FFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF 3D0000-3D7FFF 3C8000-3CFFFF 3C0000-3C7FFF 3B8000-3BFFFF 3B0000-3B7FFF 3A8000-3AFFFF 3A0000-3A7FFF 398000-39FFFF 390000-397FFF 388000-38FFFF 380000-387FFF 378000-37FFFF 370000-377FFF 368000-36FFFF 360000-367FFF 358000-35FFFF 350000-357FFF 348000-34FFFF 340000-347FFF 338000-33FFFF 330000-337FFF 328000-32FFFF 320000-327FFF 318000-31FFFF 310000-317FFF 308000-30FFFF 300000-307FFF
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Block address tables Table 32.
M58WTxxxKT, M58WTxxxKB Top boot block addresses, M58WT064KT (continued)
# 39 40 41 Bank 4 42 43 44 45 46 47 48 49 Bank 5 50 51 52 53 54 55 56 57 Bank 6 58 59 60 61 62 63 64 65 Bank 7 66 67 68 69 70 71 72 73 Bank 8 74 75 76 77 78 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 2F8000-2FFFFF 2F0000-2F7FFF 2E8000-2EFFFF 2E0000-2E7FFF 2D8000-2DFFFF 2D0000-2D7FFF 2C8000-2CFFFF 2C0000-2C7FFF 2B8000-2BFFFF 2B0000-2B7FFF 2A8000-2AFFFF 2A0000-2A7FFF 298000-29FFFF 290000-297FFF 288000-28FFFF 280000-287FFF 278000-27FFFF 270000-277FFF 268000-26FFFF 260000-267FFF 258000-25FFFF 250000-257FFF 248000-24FFFF 240000-247FFF 238000-23FFFF 230000-237FFF 228000-22FFFF 220000-227FFF 218000-21FFFF 210000-217FFF 208000-20FFFF 200000-207FFF 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF
Bank(1)
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M58WTxxxKT, M58WTxxxKB Table 32.
Block address tables
Top boot block addresses, M58WT064KT (continued)
# 79 80 81 Bank 9 82 83 84 85 86 87 88 89 Bank 10 90 91 92 93 94 95 96 97 Bank 11 98 99 100 101 102 103 104 105 Bank 12 106 107 108 109 110 111 112 113 Bank 13 114 115 116 117 118 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 190000-197FFF 188000-18FFFF 180000-187FFF 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F8000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF
Bank(1)
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Block address tables Table 32.
M58WTxxxKT, M58WTxxxKB Top boot block addresses, M58WT064KT (continued)
# 119 120 121 Bank 14 122 123 124 125 126 127 128 129 Bank 15 130 131 132 133 134 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF 038000-03FFFF 030000-037FFF 028000-02FFFF 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 000000-007FFF
Bank(1)
1. There are two bank regions: bank region 1 contains all the banks that are made up of main blocks only; bank region 2 contains the banks that are made up of the parameter and main blocks (parameter bank).
Table 33.
Bottom boot block addresses, M58WT064KB
# 134 133 132 Bank 15 131 130 129 128 127 126 125 124 Bank 14 123 122 121 120 119 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 3F8000-3FFFFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF 3D0000-3D7FFF 3C8000-3CFFFF 3C0000-3C7FFF 3B8000-3BFFFF 3B0000-3B7FFF 3A8000-3AFFFF 3A0000-3A7FFF 398000-39FFFF 390000-397FFF 388000-38FFFF 380000-387FFF
Bank(1)
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M58WTxxxKT, M58WTxxxKB Table 33.
Block address tables
Bottom boot block addresses, M58WT064KB (continued)
# 118 117 116 Bank 13 115 114 113 112 111 110 109 108 Bank 12 107 106 105 104 103 102 101 100 Bank 11 99 98 97 96 95 94 93 92 Bank 10 91 90 89 88 87 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 378000-37FFFF 370000-377FFF 368000-36FFFF 360000-367FFF 358000-35FFFF 350000-357FFF 348000-34FFFF 340000-347FFF 338000-33FFFF 330000-337FFF 328000-32FFFF 320000-327FFF 318000-31FFFF 310000-317FFF 308000-30FFFF 300000-307FFF 2F8000-2FFFFF 2F0000-2F7FFF 2E8000-2EFFFF 2E0000-2E7FFF 2D8000-2DFFFF 2D0000-2D7FFF 2C8000-2CFFFF 2C0000-2C7FFF 2B8000-2BFFFF 2B0000-2B7FFF 2A8000-2AFFFF 2A0000-2A7FFF 298000-29FFFF 290000-297FFF 288000-28FFFF 280000-287FFF
Bank(1)
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Block address tables Table 33.
M58WTxxxKT, M58WTxxxKB Bottom boot block addresses, M58WT064KB (continued)
# 86 85 84 Bank 9 83 82 81 80 79 78 77 76 Bank 8 75 74 73 72 71 70 69 68 Bank 7 67 66 65 64 63 62 61 60 Bank 6 59 58 57 56 55 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 278000-27FFFF 270000-277FFF 268000-26FFFF 260000-267FFF 258000-25FFFF 250000-257FFF 248000-24FFFF 240000-247FFF 238000-23FFFF 230000-237FFF 228000-22FFFF 220000-227FFF 218000-21FFFF 210000-217FFF 208000-20FFFF 200000-207FFF 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 190000-197FFF 188000-18FFFF 180000-187FFF
Bank(1)
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M58WTxxxKT, M58WTxxxKB Table 33.
Block address tables
Bottom boot block addresses, M58WT064KB (continued)
# 54 53 52 Bank 5 51 50 49 48 47 46 45 44 Bank 4 43 42 41 40 39 38 37 36 Bank 3 35 34 33 32 31 30 29 28 Bank 2 27 26 25 24 23 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address range 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F8000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF
Bank(1)
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Block address tables Table 33.
M58WTxxxKT, M58WTxxxKB Bottom boot block addresses, M58WT064KB (continued)
# 22 21 20 Bank 1 19 18 17 16 15 14 13 12 11 10 Parameter bank 9 8 7 6 5 4 3 2 1 0 Size (Kword) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 Address range 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF 038000-03FFFF 030000-037FFF 028000-02FFFF 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 007000-007FFF 006000-006FFF 005000-005FFF 004000-004FFF 003000-003FFF 002000-002FFF 001000-001FFF 000000-000FFF
Bank(1)
1. There are two bank regions: bank region 2 contains all the banks that are made up of main blocks only; bank region 1 contains the banks that are made up of the parameter and main blocks (parameter bank).
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M58WTxxxKT, M58WTxxxKB
Common Flash interface
Appendix B
Common Flash interface
The common Flash interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the Read CFI Query Command is issued the device enters CFI query mode and the data structure is read from the memory. Tables 34, 35, 36, 37, 38, 39, 40, 41, 42 and 43 show the addresses used to retrieve the data. The query data is always presented on the lowest order data outputs (DQ0-DQ7), the other outputs (DQ8-DQ15) are set to 0. The CFI data structure also contains a security area where a 64-bit unique security number is written (see Figure 5: Protection Register memory map). This area can be accessed only in read mode by the final user. It is impossible to change the security number after it has been written by Numonyx. Issue a Read Array command to return to read mode. Table 34.
Offset 00h 10h 1Bh 27h P A Reserved CFI Query Identification String System Interface Information Device Geometry Definition
Query structure overview(1)
Sub-section name Description Reserved for algorithm-specific information Command set ID and algorithm data offset Device timing and voltage information Flash device layout
Primary Algorithm-specific Extended Query Additional information specific to the table primary algorithm (optional) Alternate Algorithm-specific Extended Query table Security Code Area Additional information specific to the Alternate Algorithm (optional) Lock Protection Register Unique device Number and User Programmable OTP
80h
1. The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections detailed in Tables 35, 36, 37 and 38. Query data is always presented on the lowest order data outputs.
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Common Flash interface Table 35.
Offset 00h
M58WTxxxKT, M58WTxxxKB
CFI query identification string
Sub-section name 0020h 8866h 8810h 8867h 8811h reserved reserved reserved 0051h 0052h 0059h 0003h 0000h Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm p = 39h Query Unique ASCII String "QRY" Description Manufacturer code Value Numonyx M58WT032KT (Top) M58WT064KT (Top) M58WT032KB (Bottom) M58WT064KB (Bottom)
01h
Device code
02h 03h 04h-0Fh 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah
Reserved Reserved Reserved "Q" "R" "Y"
offset = P = 0039h Address for Primary Algorithm extended Query table (see Table 38) 0000h 0000h 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported
NA
value = A = 0000h Address for Alternate Algorithm extended Query table 0000h
NA
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M58WTxxxKT, M58WTxxxKB Table 36.
Offset
Common Flash interface
CFI query system interface information
Data Description VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts Typical time-out per single byte/word program = 2n s Typical time-out for multi-byte programming = 2 s Typical time-out per individual block erase = Typical time-out for full chip erase = 2n ms Maximum time-out for word program = 2 times typical Maximum time-out for multi-byte programming = 2n
n n n
Value
1Bh
0017h
1.7V
1Ch
0020h
2V
1Dh
0085h
8.5V
1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h
0095h 0004h 0000h 000Ah 0000h 0003h 0000h 0002h 0000h
9.5V 16s NA 1s NA 128s NA 4s NA
2n
ms
times typical
Maximum time-out per individual block erase = 2 times typical Maximum time-out for chip erase = 2n times typical
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Common Flash interface Table 37.
Offset word mode 27h 0017h 28h 29h 2Ah 2Bh 2Ch 0001h 0000h 0000h 0000h 0002h 003Eh 0000h 007Eh 0000h 0000h 0001h 0007h 0000h 0020h 0000h
M58WTxxxKT, M58WTxxxKB
Device geometry definition
Data 0016h Description M58WT032KT/B Device Size = 2n in number of bytes M58WT064KT/B Device Size = 2n in number of bytes Flash Device Interface Code description Maximum number of bytes in multi-byte program or page = 2n Number of identical sized erase block regions within the device bit 7 to 0 = x = number of Erase Block Regions M58WT032KT Region 1 Information Number of identical-size erase blocks = 003Eh+1 M58WT064KT Region 1 Information Number of identical-size erase blocks = 007Eh+1 Region 1 Information Block size in Region 1 = 0100h * 256 byte Region 2 Information Number of identical-size erase blocks = 0007h+1 Region 2 Information Block size in Region 2 = 0020h * 256 byte Value 4 Mbytes 8 Mbytes x16 Async. NA 2 63 127 64 Kbyte 8 8 Kbyte NA 8 8 Kbyte 63 127 64 Kbyte NA
2Dh 2Eh
Top devices
2Fh 30h 31h 32h 33h 34h 35h 38h 2Dh 2Eh 2Fh 30h
Reserved for future erase block region information 0007h 0000h 0020h 0000h 003Eh 0000h 007Eh 0000h 0000h 0001h Region 1 Information Number of identical-size erase block = 0007h+1 Region 1 Information Block size in Region 1 = 0020h * 256 byte M58WT032KB Region 1 Information Number of identical-size erase blocks = 003Eh+1 M58WT064KB Region 1 Information Number of identical-size erase blocks = 007Eh+1 Region 2 Information Block size in Region 2 = 0100h * 256 byte
Bottom devices
31h 32h
33h 34h 35h 38h
Reserved for future erase block region information
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M58WTxxxKT, M58WTxxxKB Table 38.
Offset (P)h = 39h
Common Flash interface
Primary algorithm-specific extended query table(1)
Data 0050h 0052h 0049h Primary Algorithm extended Query table unique ASCII string "PRI" Description Value "P" "R" "I" Major version number, ASCII Minor version number, ASCII Extended Query table contents for Primary Algorithm. Address (P+5)h contains less significant byte. bit 0 Chip Erase supported (1 = Yes, 0 = No) bit 1 Erase Suspend supported (1 = Yes, 0 = No) bit 2 Program Suspend supported (1 = Yes, 0 = No) bit 3 Legacy Lock/Unlock supported (1 = Yes, 0 = No) bit 4 Queued Erase supported (1 = Yes, 0 = No) bit 5 Instant individual block locking supported (1 = Yes, 0 = No) bit 6 Protection bits supported (1 = Yes, 0 = No) bit 7 Page mode read supported (1 = Yes, 0 = No) bit 8 Synchronous read supported (1 = Yes, 0 = No) bit 9 Simultaneous operation supported (1 = Yes, 0 = No) bit 10 to 31 Reserved; undefined bits are `0'. If bit 31 is '1' then another 31 bit field of optional features follows at the end of the bit-30 field. Supported Functions after Suspend Read Array, Read Status Register and CFI Query "1" "3"
(P+3)h = 3Ch (P+4)h = 3Dh (P+5)h = 3Eh
0031h 0033h 00E6h 0003h
(P+7)h = 40h
0000h
(P+8)h = 41h
0000h
No Yes Yes No No Yes Yes Yes Yes Yes
(P+9)h = 42h
0001h bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No) bit 7 to 1 Reserved; undefined bits are `0'
Yes
(P+A)h = 43h
0003h
Block Protect status Defines which bits in the Block Status Register section of the Query are implemented. bit 0 Block protect Status Register Lock/Unlock bit active (1 = Yes, 0 = No) bit 1 Block Lock Status Register lock-down bit active (1 = Yes, 0 = No) bit 15 to 2 Reserved for future use; undefined bits are `0' VDD Logic Supply Optimum Program/Erase voltage (highest performance)
(P+B)h = 44h
0000h
Yes Yes
(P+C)h = 45h
0018h
bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP Supply Optimum Program/Erase voltage
1.8V
(P+D)h = 46h
0090h
bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV
9V
1. The variable P is a pointer that is defined at CFI offset 15h.
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Common Flash interface Table 39.
Offset (P+E)h = 47h (P+F)h = 48h (P+10)h = 49h (P+11)h = 4Ah (P+12)h= 4Bh
M58WTxxxKT, M58WTxxxKB
Protection Register information(1)
Data 0001h 0080h 0000h 0003h 0004h Description Number of protection register fields in JEDEC ID space. 0000h indicates that 256 fields are available. Protection Field 1: Protection Description Bits 0-7 Lower byte of protection register address Bits 8-15 Upper byte of protection register address Bits 16-23 2n bytes in factory pre-programmed region Bits 24-31 2n bytes in user programmable region Value 1
0080h
8 bytes 16 bytes
1. The variable P is a pointer that is defined at CFI offset 15h.
Table 40.
Offset
Burst read information(1)
Data Description Page-mode read capability bits 0-7 'n' such that 2n HEX value represents the number of read-page bytes. See offset 28h for device word width to determine page-mode data output width. Number of synchronous mode read configuration fields that follow. Synchronous mode read capability configuration 1 bit 3-7 Reserved bit 0-2 'n' such that 2n+1 HEX value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. A value of 07h indicates that the device is capable of continuous linear bursts that will output data until the internal burst counter reaches the end of the device's burstable address space. This field's 3-bit value can be written directly to the read configuration register bit 0-2 if the device is configured for its maximum word width. See offset 28h for word width to determine the burst data output width. Synchronous mode read capability configuration 2 Synchronous mode read capability configuration 3 Synchronous mode read capability configuration 4 Value
(P+13)h = 4Ch
0003h
8 bytes
(P+14)h = 4Dh
0004h
4
(P+15)h = 4Eh
0001h
4
(P+16)h = 4Fh (P+17)h = 50h (P+18)h = 51h
0002h 0003h 0007h
8 16 Cont.
1. The variable P is a pointer that is defined at CFI offset 15h.
Table 41.
Bank and erase block region information(1) (2)
M58WT032KB, M58WT064KB Offset (P+19)h = 52h Data 02h Number of bank regions within the device Description
M58WT032KT, M58WT064KT Offset (P+19)h = 52h Data 02h
1. The variable P is a pointer that is defined at CFI offset 15h. 2. Bank regions. There are two bank regions, see Tables 30, 31, 32 and 33.
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M58WTxxxKT, M58WTxxxKB Table 42. Bank and erase block region 1 information(1)
M58WT032KB, M58WT064KB Offset (P+1A)h = 53h (P+1B)h = 54h Data 01h
Common Flash interface
M58WT032KT, M58WT064KT Offset (P+1A)h = 53h (P+1B)h = 54h Data 07h(2) 0Fh(3) 00h
Description
Number of identical banks within Bank Region 1 00h Number of program or erase operations allowed in Bank Region 1: Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations Number of program or erase operations allowed in other banks while a bank in same region is programming Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations Number of program or erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations Types of erase block regions in Bank Region 1 n = number of erase block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region.(4) Bank Region 1 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: nx256 = number of bytes in erase block region
(P+1C)h = 55h
11h
(P+1C)h = 55h
11h
(P+1D)h = 56h
00h
(P+1D)h = 56h
00h
(P+1E)h = 57h
00h
(P+1E)h = 57h
00h
(P+1F)h = 58h
01h
(P+1F)h = 58h
02h
(P+20)h = 59h (P+21)h = 5Ah (P+22)h = 5Bh (P+23)h = 5Ch (P+24)h = 5Dh (P+25)h = 5Eh
07h 00h 00h 01h 64h 00h
(P+20)h = 59h (P+21)h = 5Ah (P+22)h = 5Bh (P+23)h = 5Ch (P+24)h = 5Dh (P+25)h = 5Eh
07h 00h 20h 00h 64h 00h Bank Region 1 (Erase Block Type 1) Minimum block erase cycles x 1000 Bank Region 1 (Erase Block Type 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved 5Eh 01 5Eh 01 Bank Region 1 (Erase Block Type 1): page mode and synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved
(P+26)h = 5Fh
01h
(P+26)h = 5Fh
01h
(P+27)h = 60h
03h
(P+27)h = 60h
03h
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Common Flash interface Table 42.
M58WTxxxKT, M58WTxxxKB
Bank and erase block region 1 information(1) (continued)
M58WT032KB, M58WT064KB Offset (P+28)h = 61h (P+29)h = 62h (P+2A)h = 63h (P+2B)h = 64h (P+2C)h = 65h (P+2D)h = 66h Data 06h 00h 00h 01h 64h 00h Bank Region 1 (Erase Block Type 2) Minimum block erase cycles x 1000 Bank Regions 1 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved Bank Region 1 (Erase Block Type 2): page mode and synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved Bank Region 1 Erase Block Type 2 Information Description
M58WT032KT, M58WT064KT Offset Data
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: nx256 = number of bytes in erase block region
(P+2E)h = 67h
01h
(P+2F)h = 68h
03h
1. The variable P is a pointer which is defined at CFI offset 15h. 2. Applies to M58WT032KT. 3. Applies to M58WT064KT. 4. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32 and 33.
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M58WTxxxKT, M58WTxxxKB Table 43. Bank and Erase block region 2 information(1)
M58WT032KB, M58WT064KB Offset (P+30)h = 69h (P+31)h = 6Ah Data 07h(2) 0Fh(3) 00h
Common Flash interface
M58WT032KT, M58WT064KT Offset (P+28)h = 61h (P+29)h = 62h Data 01h 00h
Description
Number of identical banks within Bank Region 2
(P+2A)h = 63h
11h
(P+32)h = 6Bh
11h
Number of program or erase operations allowed in Bank Region 2: Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations Number of program or erase operations allowed in other banks while a bank in this region is programming Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations Number of program or erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations Types of erase block regions in Bank Region 2 n = number of erase block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region.(4) Bank Region 2 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: nx256 = number of bytes in erase block region
(P+2B)h = 64h
00h
(P+33)h = 6Ch
00h
(P+2C)h = 65h
00h
(P+34)h = 6Dh
00h
(P+2D)h = 66h
02h
(P+35)h = 6Eh
01h
(P+2E)h = 67h (P+2F)h = 68h (P+30)h = 69h (P+31)h = 6Ah (P+32)h = 6Bh (P+33)h = 6Ch
06h 00h 00h 01h 64h 00h
(P+36)h = 6Fh (P+37)h = 70h (P+38)h = 71h (P+39)h = 72h (P+3A)h = 73h (P+3B)h = 74h
07h 00h 00h 01h 64h 00h Bank Region 2 (Erase Block Type 1) Minimum block erase cycles x 1000 Bank Region 2 (Erase Block Type 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved Bank Region 2 (Erase Block Type 1): page mode and synchronous mode capabilities (defined in Table 40) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved
(P+34)h = 6Dh
01h
(P+3C)h = 75h
01h
(P+35)h = 6Eh
03h
(P+3D)h = 76h
03h
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Common Flash interface Table 43.
M58WTxxxKT, M58WTxxxKB
Bank and Erase block region 2 information(1) (continued)
M58WT032KB, M58WT064KB Offset Data Description
M58WT032KT, M58WT064KT Offset (P+36)h = 6Fh (P+37)h = 70h (P+38)h = 71h (P+39)h = 72h (P+3A)h = 73h (P+3B)h = 74h Data 07h 00h 20h 00h 64h 00h
Bank Region 2 Erase Block Type 2 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: nx256 = number of bytes in erase block region
Bank Region 2 (Erase Block Type 2) Minimum block erase cycles x 1000 Bank Region 2 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved Bank Region 2 (Erase Block Type 2): page mode and synchronous mode capabilities (defined in Table 40) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+3E)h = 77h (P+3F)h = 78h Feature Space definitions Reserved
(P+3C)h = 75h
01h
(P+3D)h = 76h
03h
(P+3E)h = 77h (P+3F)h = 78h
1. The variable P is a pointer which is defined at CFI offset 15h. 2. Applies to M58WT032KB. 3. Applies to M58WT064KB. 4. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32 and 33.
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M58WTxxxKT, M58WTxxxKB
Flowcharts and pseudo codes
Appendix C
Flowcharts and pseudo codes
Figure 20. Program flowchart and pseudo code
Start program_command (addressToProgram, dataToProgram) {: " writeToFlash (addressToProgram, 0x40); /*writeToFlash (addressToProgram, 0x10);*/ /*see note (3)*/ " writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ do { status_register=readFlash (addressToProgram); "see note (3)"; /* E or G must be toggled*/ NO } while (status_register.SR7== 0) ; YES SR3 = 0 YES SR4 = 0 YES SR1 = 0 YES End } NO Program to Protected Block Error (1, 2) if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;
Write 40h or 10h (3)
Write Address & Data
Read Status Register (3)
SR7 = 1
AI06170b
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations. 3. Any address within the bank can equally be used.
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Flowcharts and pseudo codes Figure 21. Double word program flowchart and pseudo code
M58WTxxxKT, M58WTxxxKB
Start
Write 35h
Write Address 1 & Data 1 (3, 4)
Write Address 2 & Data 2 (3)
double_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2) { writeToFlash (addressToProgram1, 0x35); /*see note (4)*/ writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ /*Memory enters read status state after the Program command*/ do { status_register=readFlash (addressToProgram) ; "see note (4)" /* E or G must be toggled*/
Read Status Register (4)
SR7 = 1 YES SR3 = 0 YES SR4 = 0 YES SR1 = 0 YES End
NO } while (status_register.SR7== 0) ;
NO
VPP Invalid Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;
NO
Program Error (1, 2)
if (status_register.SR4==1) /*program error */ error_handler ( ) ;
NO
Program to Protected Block Error (1, 2)
if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;
}
AI06171b
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase operations. 3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0. 4. Any address within the bank can equally be used.
100/117
M58WTxxxKT, M58WTxxxKB Figure 22. Quadruple word program flowchart and pseudo code
Start
Flowcharts and pseudo codes
Write 56h
Write Address 1 & Data 1 (3, 4)
quadruple_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2, addressToProgram3, dataToProgram3, addressToProgram4, dataToProgram4) { writeToFlash (addressToProgram1, 0x56); /*see note (4) */ writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ writeToFlash (addressToProgram3, dataToProgram3) ; /*see note (3) */ writeToFlash (addressToProgram4, dataToProgram4) ; /*see note (3) */ /*Memory enters read status state after the Program command*/ do { status_register=readFlash (addressToProgram) ; /"see note (4) "/ /* E or G must be toggled*/
Write Address 2 & Data 2 (3)
Write Address 3 & Data 3 (3)
Write Address 4 & Data 4 (3)
Read Status Register (4)
SR7 = 1 YES SR3 = 0 YES SR4 = 0 YES SR1 = 0 YES End
NO } while (status_register.SR7== 0) ;
NO
VPP Invalid Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;
NO
Program Error (1, 2)
if (status_register.SR4==1) /*program error */ error_handler ( ) ;
NO
Program to Protected Block Error (1, 2)
if (status_register.SR==1) /*program to protect block error */ error_handler ( ) ;
}
AI06977b
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase operations. 3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1. 4. Any address within the bank can equally be used.
101/117
Flowcharts and pseudo codes
M58WTxxxKT, M58WTxxxKB
Figure 23. Program suspend and resume flowchart and pseudo code
Start program_suspend_command ( ) { writeToFlash (any_address, 0xB0) ; writeToFlash (bank_address, 0x70) ; /* read status register to check if program has already completed */ Write 70h do { status_register=readFlash (bank_address) ; /* E or G must be toggled*/
Write B0h
Read Status Register
SR7 = 1 YES SR2 = 1
NO
} while (status_register.SR7== 0) ;
NO
Program Complete
if (status_register.SR2==0) /*program completed */ { writeToFlash (bank_address, 0xFF) ; read_data ( ) ; /*The device returns to Read Array (as if program/erase suspend was not issued).*/ } else { writeToFlash (bank_address, 0xFF) ;
Write FFh
YES Write FFh
Read Data
Read data from another address
read_data ( ); /*read data from another address*/
Write D0h
writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/
Write 70h(1) } Program Continues with Bank in Read Status Register Mode }
writeToFlash (bank_address, 0x70) ; /*read status register to check if program has completed */
AI10117b
1. The Read Status Register command (Write 70h) can be issued just before or just after the Program Resume command.
102/117
M58WTxxxKT, M58WTxxxKB Figure 24. Block erase flowchart and pseudo code
Start
Flowcharts and pseudo codes
Write 20h (2)
erase_command ( blockToErase ) { writeToFlash (blockToErase, 0x20) ; /*see note (2) */ writeToFlash (blockToErase, 0xD0) ; /* only A12-A20 are significant */ /* Memory enters read status state after the Erase Command */ do { status_register=readFlash (blockToErase) ; /* see note (2) */ /* E or G must be toggled*/
Write Block Address & D0h
Read Status Register (2)
SR7 = 1
NO } while (status_register.SR7== 0) ;
YES SR3 = 0 YES SR4, SR5 = 1 NO SR5 = 0 YES SR1 = 0 YES End }
AI13431
NO
VPP Invalid Error (1)
if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;
YES
Command Sequence Error (1)
if ( (status_register.SR4==1) && (status_register.SR5==1) ) /* command sequence error */ error_handler ( ) ;
NO
Erase Error (1)
if ( (status_register.SR5==1) ) /* erase error */ error_handler ( ) ;
NO
Erase to Protected Block Error (1)
if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;
1. If an error is found, the Status Register must be cleared before further Program/Erase operations. 2. Any address within the bank can be used also.
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Flowcharts and pseudo codes Figure 25. Erase suspend and resume flowchart and pseudo code
M58WTxxxKT, M58WTxxxKB
Start
Write B0h
erase_suspend_command ( ) { writeToFlash (bank_address, 0xB0) ; writeToFlash (bank_address, 0x70) ; /* read status register to check if erase has already completed */
Write 70h
Read Status Register
do { status_register=readFlash (bank_address) ; /* E or G must be toggled*/
SR7 = 1 YES SR6 = 1
NO
} while (status_register.SR7== 0) ;
NO
Erase Complete
if (status_register.SR6==0) /*erase completed */ { writeToFlash (bank_address, 0xFF) ;
Write FFh
YES Write FFh
Read Data } else
read_data ( ) ; /*The device returns to Read Array (as if program/erase suspend was not issued).*/
{ writeToFlash (bank_address, 0xFF) ; Read data from another block, Program, Set Configuration Register or Block Lock/Unlock/Lock-Down Write D0h writeToFlash (bank_address, 0xD0) ; /*write 0xD0 to resume erase*/ writeToFlash (bank_address, 0x70) ; /*read status register to check if erase has completed */ } } Erase Continues with Bank in Read Status Register Mode read_program_data ( ); /*read or program data from another block*/
Write 70h(1)
AI10116d
1. The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
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M58WTxxxKT, M58WTxxxKB Figure 26. Locking operations flowchart and pseudo code
Flowcharts and pseudo codes
Start
Write 60h (1)
locking_operation_command (address, lock_operation) { writeToFlash (address, 0x60) ; /*configuration setup*/ /* see note (1) */ if (lock_operation==LOCK) /*to protect the block*/ writeToFlash (address, 0x01) ; else if (lock_operation==UNLOCK) /*to unprotect the block*/ writeToFlash (address, 0xD0) ; else if (lock_operation==LOCK-DOWN) /*to lock the block*/ writeToFlash (address, 0x2F) ; writeToFlash (address, 0x90) ; /*see note (1) */
Write 01h, D0h or 2Fh
Write 90h (1)
Read Block Lock States
Locking change confirmed? YES Write FFh (1)
NO
if (readFlash (address) ! = locking_state_expected) error_handler () ; /*Check the locking state (see Read Block Signature table )*/
writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/ /*see note (1) */ }
End
AI06176b
1. Any address within the bank can equally be used.
105/117
Flowcharts and pseudo codes Figure 27. Protection Register program flowchart and pseudo code
M58WTxxxKT, M58WTxxxKB
Start
Write C0h (3)
protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (addressToProgram, 0xC0) ; /*see note (3) */ writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ do { status_register=readFlash (addressToProgram) ; /* see note (3) */ /* E or G must be toggled*/ NO } while (status_register.SR7== 0) ;
Write Address & Data
Read Status Register (3)
SR7 = 1 YES SR3 = 0 YES SR4 = 0 YES SR1 = 0 YES End
NO
VPP Invalid Error (1, 2)
if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;
NO
Program Error (1, 2)
if (status_register.SR4==1) /*program error */ error_handler ( ) ;
NO
Program to Protected Block Error (1, 2)
if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;
}
AI06177b
1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations. 3. Any address within the bank can equally be used.
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M58WTxxxKT, M58WTxxxKB Figure 28. Enhanced factory program flowchart
SETUP PHASE Start Write 30h Address WA1 Write D0h Address WA1
Flowcharts and pseudo codes
VERIFY PHASE Write PD1 Address WA1(1)
Read Status Register
Read Status Register SR0 = 0? NO SR7 = 0? YES Write PD2 Address WA2(1) NO NO
Check SR4, SR3 and SR1 for program, VPP and Lock Errors Exit PROGRAM PHASE
YES SR0 = 0? YES Write PD1 Address WA1
Read Status Register
Read Status Register
SR0 = 0? YES NO Write PDn Address WAn(1)
NO
SR0 = 0? YES Write PD2 Address WA2(1)
Read Status Register
Read Status Register
NO SR0 = 0? YES
SR0 = 0? YES Write PDn Address WAn(1)
NO
Write FFFFh Address = Block WA1 / EXIT PHASE Read Status Register
Read Status Register
SR7 = 1? YES
NO
SR0 = 0? YES Write FFFFh Address = Block WA1 /
NO Check Status Register for Errors
End
AI06160
1. Address can remain Starting Address WA1 or be incremented.
107/117
Flowcharts and pseudo codes
M58WTxxxKT, M58WTxxxKB
16.1
Enhanced factory program pseudo code
efp_command(addressFlow,dataFlow,n) /* n is the number of data to be programmed */ { /* setup phase */ writeToFlash(addressFlow[0],0x30); writeToFlash(addressFlow[0],0xD0); status_register=readFlash(any_address); if (status_register.SR7==1){ /*EFP aborted for an error*/ if (status_register.SR4==1) /*program error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR1==1) /*program to protect block error*/ error_handler(); } else{ /*Program Phase*/ do{ status_register=readFlash(any_address); /* E or G must be toggled*/ } while (status_register.SR0==1) /*Ready for first data*/ for (i=0; i++; i< n){ writeToFlash(addressFlow[i],dataFlow[i]); /* status register polling*/ do{ status_register=readFlash(any_address); /* E or G must be toggled*/ } while (status_register.SR0==1); /* Ready for a new data */ } writeToFlash(another_block_address,FFFFh); /* Verify Phase */ for (i=0; i++; i< n){ writeToFlash(addressFlow[i],dataFlow[i]); /* status register polling*/ do{ status_register=readFlash(any_address); /* E or G must be toggled*/ } while (status_register.SR0==1); /* Ready for a new data */ } writeToFlash(another_block_address,FFFFh); /* exit program phase */ /* Exit Phase */ /* status register polling */ do{ status_register=readFlash(any_address); /* E or G must be toggled */ } while (status_register.SR7==0); if (status_register.SR4==1) /*program failure error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR1==1) /*program to protect block error*/ error_handler(); } }
108/117
M58WTxxxKT, M58WTxxxKB Figure 29. Quadruple enhanced factory program flowchart
SETUP PHASE Start Write PD1 Address WA1(1)
Flowcharts and pseudo codes
LOAD PHASE
Write 75h Address WA1 FIRST LOAD PHASE
Write PD1 Address WA1
Write PD2 Address WA2(2)
Read Status Register
Write PD3 Address WA3(2)
NO SR7 = 0? YES Write PD4 Address WA4(2) EXIT PHASE Check SR4, SR3 and SR1 for program, VPP and Lock Errors PROGRAM AND VERIFY PHASE
Read Status Register
Write FFFFh Address = Block WA1 /
Exit Check SR4 for Programming Errors
NO SR0 = 0?
YES Last Page? YES NO
End
AI06178b
1. Address can remain Starting Address WA1 (in which case the next page is programmed) or can be any address in the same block. 2. The address is only checked for the first word of each page as the order to program the words is fixed, so subsequent words in each page can be written to any address.
109/117
Flowcharts and pseudo codes
M58WTxxxKT, M58WTxxxKB
16.2
Quadruple enhanced factory program pseudo code
quad_efp_command(addressFlow,dataFlow,n) /* n is the number of pages to be programmed.*/ { /* Setup phase */ writeToFlash(addressFlow[0],0x75); for (i=0; i++; i< n){ /*Data Load Phase*/ /*First Data*/ writeToFlash(addressFlow[i],dataFlow[i,0]); /*at the first data of the first page, Quad-EFP may be aborted*/ if (First_Page) { status_register=readFlash(any_address); if (status_register.SR7==1){ /*EFP aborted for an error*/ if (status_register.SR4==1) /*program error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR1==1) /*program to protect block error*/ error_handler(); } } /*2nd data*/ writeToFlash(addressFlow[i],dataFlow[i,1]); /*3rd data*/ writeToFlash(addressFlow[i],dataFlow[i,2]); /*4th data*/ writeToFlash(addressFlow[i],dataFlow[i,3]); /* Program&Verify Phase */ do{ status_register=readFlash(any_address); /* E or G must be toggled*/ }while (status_register.SR0==1) } /* Exit Phase */ writeToFlash(another_block_address,FFFFh); /* status register polling */ do{ status_register=readFlash(any_address); /* E or G must be toggled */ } while (status_register.SR7==0); if (status_register.SR1==1) /*program to protected block error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR4==1) /*program failure error*/ error_handler(); } }
110/117
M58WTxxxKT, M58WTxxxKB
Command interface state tables
Appendix D
Table 44.
Command interface state tables
Command interface states - modify table, next state(1)
Command Input Erase Read Clear Confirm, P/E Block DWP, Program/ Read Status Electronic WP EFP Quad-EFP Resume, Erase QWP Erase Status Register signature, setup(3)(4) Setup(3)(4) Setup(3)(4) Setup Setup Block Unlock Read CFI Suspend Register (5) (10/40h) (30h) (75h) confirm, EFP Query (B0h) (70h) (35h, 56h) (20h) Confirm (50h) (90h, 98h) (D0h) Program Setup Program Setup Erase Setup EFP Quad-EFP Setup Setup Ready OTP Busy OTP Busy IS in OTP busy OTP busy Program Busy Program busy IS in Program busy Program busy PS Program busy OTP Busy Ready Ready (Lock Error)
Current CI State
Read Array(2) (FFh)
Ready Lock/CR Setup Setup OTP Busy IS in OTP busy Setup Busy Program IS in Program busy Suspend IS in PS Setup Busy IS in Erase busy Suspend IS in ES Setup Busy Program IS in Program in ES busy in ES Suspend IS in PS in ES Lock/CR Setup in ES
Ready
Ready (Lock Error)
Program Busy PS IS in Program Suspend Program Busy Program suspend Ready (error) Erase Busy IS in Erase busy Erase Busy Erase Busy ES Ready (error) Erase Busy Program Suspend
Erase
Erase busy Program in ES
ES
IS in Erase Suspend
Erase Busy
Erase Suspend
Erase Suspend Program Busy in Erase Suspend Program Busy in ES IS in Program Busy in Erase Suspend Program Busy PS in ES in ES Program Busy in Erase Suspend
Program Busy in Erase Suspend Program Busy in ES
PS in ES
IS in Program suspend in ES
Program Suspend in Erase Suspend
Program Suspend in Erase Suspend Erase Suspend (Lock Error) ES Erase Suspend (Lock Error)
111/117
Command interface state tables Table 44.
M58WTxxxKT, M58WTxxxKB
Command interface states - modify table, next state(1) (continued)
Command Input Erase Read Clear Confirm, P/E Block DWP, Program/ Read Status Electronic WP EFP Quad-EFP Resume, Erase QWP Erase Status Register signature, setup(3)(4) Setup(3)(4) Setup(3)(4) Setup Setup Block Unlock Read CFI Suspend Register (5) (10/40h) (30h) (75h) confirm, EFP Query (B0h) (70h) (35h, 56h) (20h) Confirm (50h) (90h, 98h) (D0h) Ready (error) EFP Busy EFP Busy(6) EFP Verify(6) Quad EFP Busy(6) Quad EFP Busy(6) Ready (error)
Current CI State
Read Array(2) (FFh)
Setup EFP Busy Verify Quad EFP Setup Busy
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller, PS = program suspend, ES = erase suspend, IS = Illegal state. 2. At Power-Up, all banks are in read array mode. A Read Array command issued to a busy bank, results in undetermined data output. 3. The two cycle command should be issued to the same bank address. 4. If the P/EC is active, both cycles are ignored. 5. The Clear Status Register command clears the Status Register error bits except when the P/EC is busy or suspended. 6. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to `0'.EFP and Quad EFP are busy if Block Address is first EFP Address. Any other commands are treated as data.
112/117
M58WTxxxKT, M58WTxxxKB Table 45.
Command interface state tables
Command interface states - modify table, next output(1)
Command Input(2) Block Read DWP, QWP Erase Array(3) Setup(4)(5) Setup(4)(5) (FFh) (35h, 56h) (20h) QuadEFP Setup (75h) Erase Confirm Program/ Read Clear Status Read Electronic P/E Resume, Erase Status Register(6) signature, Read Block Unlock CFI Query (90h, Suspend Register confirm, EFP (50h) 98h) (B0h) (70h) Confirm (D0h)
Current CI State
EFP Setup (30h)
Program Setup Erase Setup OTP Setup Program Setup in Erase Suspend EFP Setup EFP Busy EFP Verify Quad EFP Setup Quad EFP Busy Lock/CR Setup Lock/CR Setup in Erase Suspend OTP Busy Ready Program Busy Erase Busy Array Program/Erase Suspend Program Busy in Erase Suspend Program Suspend in Erase Suspend Illegal State Output Unchanged Status Register Output Unchanged Status Register Output Unchanged Electronic Signature/CFI Status Register Status Register
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller, IS = Illegal State, ES = Erase suspend, PS = Program suspend. 2. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A bank can be placed in read array, Read Status Register, Read Electronic Signature or Read CFI Query mode, depending on the command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the bank's output state. 3. At Power-Up, all banks are in read array mode. A Read Array command issued to a busy bank, results in undetermined data output. 4. The two cycle command should be issued to the same bank address. 5. If the P/EC is active, both cycles are ignored. 6. The Clear Status Register command clears the Status Register error bits except when the P/EC is busy or suspended.
113/117
Command interface state tables Table 46. Command interface states - Lock table, next state(1)
Command Input Current CI State Lock/CR Setup(2) (60h) Lock/CR Setup OTP Setup(2) (C0h) OTP Setup Ready OTP Busy IS in OTP busy OTP Busy Program Busy IS in Program busy Program busy IS in PS OTP Busy Block Lock Confirm (01h)
M58WTxxxKT, M58WTxxxKB
Block Lock- Set CR EFP Exit, Down Confirm Quad EFP Confirm (2Fh) (03h) Exit(3) Ready
Illegal Command(4)
P/E. C. Operation Completed N/A
Ready Lock/CR Setup Setup OTP Busy IS in OTP busy Setup Busy Program IS in Program busy Suspend IS in PS Setup Busy Erase IS in Erase Busy Suspend IS in ES Setup Busy Program in Erase Suspend IS in Program busy in ES Suspend IS in PS in ES Lock/CR Setup in ES Setup EFP Busy Verify Setup QuadEFP Busy
Ready (Lock error)
Ready (Lock error)
N/A
Ready IS Ready N/A
Program Busy
Ready IS Ready N/A N/A N/A
Program Suspend Program Suspend Ready (error)
IS in Erase Busy Erase Busy Lock/CR Setup in ES IS in Erase Suspend Erase Suspend
Erase Busy
Ready IS Ready
Erase Suspend
N/A N/A
Program Busy in Erase Suspend IS in Program busy in ES Program Busy in Erase Suspend Program busy in ES IS in PS in ES Program Suspend in Erase Suspend N/A Program Suspend in Erase Suspend Erase Suspend (Lock error) Erase Suspend Ready (error) EFP Busy
(5)
ES IS in ES
Erase Suspend (Lock error)
N/A N/A
EFP Verify Ready
EFP Busy
(5)
N/A Ready N/A
EFP Verify(5) Quad EFP Busy(5) Quad EFP Busy(5)
EFP Verify(5)
Ready
Quad EFP Busy(4)
Ready
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, P/E. C. = Program/Erase Controller, IS = Illegal state, ES = Erase suspend, PS = Program suspend. 2. If the P/EC is active, both cycles are ignored. 3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh. 4. Illegal commands are those not defined in the command set. 5. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to `0'. EFP and Quad EFP are busy if Block Address is first EFP Address. Any other commands are treated as data.
114/117
M58WTxxxKT, M58WTxxxKB Table 47. Command interface states - lock table, next output(1)
Command Input Current CI State Lock/CR Setup(2) (60h) Block Lock Confirm (01h) Block LockDown Confirm (2Fh) Set CR Confirm (03h)
Command interface state tables
OTP Setup(2) (C0h)
EFP Exit, Quad EFP Exit(3)
Illegal Command(4)
P/E. C. Operation Completed
Program Setup Erase Setup OTP Setup Program Setup in Erase Suspend EFP Setup EFP Busy EFP Verify Quad EFP Setup Quad EFP Busy Lock/CR Setup Lock/CR Setup in Erase Suspend OTP Busy Ready Program Busy Erase Busy Status Register Program/Erase Suspend Program Busy in Erase Suspend Program Suspend in Erase Suspend Illegal State Output Unchanged Output Unchanged Array Output Unchanged Status Register Array Status Register Output Unchanged Status Register
1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Factory Program, P/E. C. = Program/Erase Controller. 2. If the P/EC is active, both cycles are ignored. 3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh. 4. Illegal commands are those not defined in the command set.
115/117
Revision history
M58WTxxxKT, M58WTxxxKB
Revision history
Table 48.
Date 30-Jan-2008 20-Mar-2008
Document revision history
Revision 1 2 Initial release. Applied Numonyx branding. Changes
116/117
M58WTxxxKT, M58WTxxxKB
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